2SB1123
PNP-Silicon
General use Transistors
1W
、1.5A、25V
4
Applications
：Can
be used for switching and amplifying in various
electrical and electronic circuit.
1
2
3
SOT-89
Maximum ratings
Parameters
Collector-emitter voltage (I
B
=0)
Collector-base voltage（I
E
=0）
Emitter-base voltage（I
C
=0）
Collector current
Total
power(T
A
=25℃)
*
Junction temperature
Storage temperature
dissipation
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
tot
T
jm
T
stg
Rating
25
40
6
1.5
1
150
-55½150
Unit
V
V
V
A
W
℃
℃
* Device is mounted on a printed circuit board.
Electrical characteristics（Unless otherwise specified，T
A
=25℃）
Parameters
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Forward current
transfer ratio
S
h
FE
T
I
CBO
V
CE
（
sat
）
f
T
V
CB
=35V，I
E
=0
I
C
=800mA，
B
=80mA
I
I
C
=50mA，
CE
=10V，
V
f=100MHz
V
CE
=1V；I
C
=100mA
200
—
—
200
400
100
0.5
—
—
nA
V
MHz
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
Test condition
I
C
=2mA，I
B
=0
I
C
=100µA，I
E
=0
I
E
=100µA，I
C
=0
Min.
25
40
6
140
Max.
—
—
—
280
Unit
V
V
V
—
Collector-base current
Collector-emitter saturation voltage
Characteristic frequency
REV.08
1 of 3
2SB1123
Typical characteristics
REV.08
2 of 3
2SB1123
Outline dimensions
Unit：mm
Dimensions
Symbol
A
b
b1
b2
c
D
E
e
e1
HE
L
LE
α
SOT-89
type
min
1.4
0.35
0.4
0.35
4.4
2.35
max
1.6
0.55
0.65
0.45
4.6
2.55
1.6
1.5
3
4.15
2.7
1.0
5o
Fig.7
Outline Dimensions
REV.08
3 of 3
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