P2SB2907
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
Voltage
Features
PNP epitaxial silicon, planar design
Collector-emitter voltage VCE = -60V
Collector current IC = -600mA
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
TO-92 AMMO
3
COLLECTOR
-60 V
Current
-600 mA
1
1
TO-92
(Halogen Free)
2
BASE
Mechanical Data
Case : TO-92 and TO-92 AMMO Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.007 ounces, 0.196grams
1
EMMTER
Marking : B2907
o
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current – Continuous
Power Dissipation
T
A
=25
o
C
Derate above 25
o
C
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
P
D
LIMITS
UNITS
V
V
V
mA
mW
mW/
o
C
o
-60
-60
-5.0
-600
625
5
-55~150
Operating Junction and
Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient
T
J
,T
STG
C
R
θJA
200
o
C/W
Limited only By Maximum Junction Temperature
September 2,2015-REV.01
Page 1
P2SB2907
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Base Cutoff Current
V
(BR)
CEO
V
(BR)
CBO
V
(BR)
EBO
I
BL
I
CEX
Collector Cutoff Current
I
CBO
I
C
=-10mA, I
B
=0
I
C
=-10uA, I
E
=0
I
E
=-10uA, I
C
=0
V
CE
=-30V,V
EB
=-0.5V
V
CE
=-30V,V
EB
=-0.5V
V
CB
=-50V, I
E
=0
V
CB
=-50V, I
E
=0
T
J
=125
o
C
ON CHARACTERISTICS
I
C
=-0.1mA, V
CE
=-10V
I
C
=-1.0mA, V
CE
=-10V
DC Current Gain
h
FE
I
C
=-10mA, V
CE
=-10V
I
C
=-150mA, V
CE
=-10V
I
C
=-500mA, V
CE
=-10V
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
SMALL–SIGNAL CHARACTERISTICS
Collector–Base Capacitance
Emitter–Base Capacitance
Current Gain-Bandwidth Product
SWITCHING
Turn-On Time
Delay Time
Rise Time
Turn-Off F Time
Storage Time
Fall Time
t
on
t
d
t
r
t
off
t
s
t
f
V
CC
=-30V, V
BE
=-0.5V
I
C
=-150mA, I
B
=-15mA
V
CC
=-6V, I
C
=-150mA,
I
B1
= I
B2
=-15mA
-
-
-
-
-
-
-
-
-
-
-
-
45
10
40
100
80
30
ns
C
CBO
C
EBO
F
T
V
CB
=-10V,I
E
=0,f=1MHz
V
CB
=-2V,I
C
=0,f=1MHz
I
C
=-50mA,V
CE
=20V
f=100MHz
-
-
200
-
-
-
8
30
-
pF
pF
MHz
V
CE(SAT)
V
BE(SAT)
I
C
=-150mA, I
B
=-15mA
I
C
=-500mA, I
B
=-50mA
I
C
=-150mA, I
B
=-15mA
I
C
=-500mA, I
B
=-50mA
75
100
100
100
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
300
-
-0.4
-1.6
-1.3
-2.6
V
V
-
-60
-60
-5.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-50
-50
-50
-10
V
V
V
nA
nA
nA
uA
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
o
September 2,2015-REV.01
Page 2
P2SB2907
TYPICAL CHARACTERISTIC CURVES
Fig.1 DC Current Gain
Fig.2 Corrector Saturation Region
Fig.3 Turn-On Time
Fig.4 Turn-Off Time
September 2,2015-REV.01
Page 3
P2SB2907
TYPICAL CHARACTERISTIC CURVES
Fig.5 Frequency Effects
Fig.6 Source Resistance Effects
Fig.7 Capacitances
Fig.8 Current Gain Bandwidth Product
Fig.9 On Voltage
Fig.10 Temperature Coefficients
September 2,2015-REV.01
Page 4
P2SB2907
Packaging Information
TO-92 AMMO Dimension
Unit: mm
.
TO-92
Dimension
Unit: mm
September 2,2015-REV.01
Page 5
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