JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
2SB507
TRANSISTOR (PNP)
TO-220-3L
1. BASE
FEATURES
Low Collector-Emitter Saturation Voltage
Vce(sat)=-1V(MAX)@I
C
=-2A,I
B
=-0.2A
DC Current Gain h
FE
=40~320@IC=-1A
Complementray to NPN 2SD313
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-60
-60
-5
-3
1.75
150
-55-150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
(1)
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
(1)
h
FE(2)
(1)
Test
conditions
Min
-60
-60
-5
Typ
Max
Unit
V
V
V
I
C
=-100μA, I
E
=0
I
C
=-10mA, I
B
=0
I
E
=-100μA, I
C
=0
V
CB
=-20V, I
E
=0
V
CE
=-60V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-2V, I
C
=-1A
V
CE
=-2V, I
C
=-0.1A
I
C
=-2A, I
B
=-200mA
V
CE
=-2V, I
C
=-1A
V
CE
=-5V, I
C
=-500mA,f=1MHz
-100
-5
-1
40
40
-1
-1.5
5
320
μA
mA
mA
Collector-emitter saturation voltage
(1)
Base-emitter voltage
(1)
Transition frequency
(1)
V
CE(sat)
(1)
V
BE
(1)
f
T
V
V
MHz
Pulse Test: Pulse Width=300μs,Duty Cycle≤2.0%
CLASSIFICATION OF
Rank
Range
h
FE(1)
C
40-80
D
60-120
E
100-200
F
160-320
A,Mar,2011
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