JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SB740
TRANSISTOR (PNP)
TO – 92M
TO – 92MOD
1. COLLECTOR
1. EMITTER
2. BASE
2. COLLECTOR
3. EMITTER
3. BASE
FEATURES
Low Frequency Power Amplifier
Complementary Pair with 2SD789
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-70
-50
-6
-1
900
139
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
C
ob
f
T
Test
conditions
Min
-70
-50
-6
-1
-0.2
100
35
150
320
-0.6
V
pF
MHz
Typ
Max
Unit
V
V
V
μA
μA
I
C
=-10µA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-10µA,I
C
=0
V
CB
=-55V,I
E
=0
V
EB
=-6V,I
C
=0
V
CE
=-2V, I
C
=-100mA
I
C
=-1A,I
B
=-100mA
V
CB
=-10V,I
E
=0, f=1MHz
V
CE
=-2V,I
C
=-10mA
CLASSIFICATION OF h
FE
RANK
RANGE
B
100-200
C
160-320
A,Dec,2010
电子工程世界
