JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2SC1923
TRANSISTOR (NPN)
1. EMITTER
FEATURES
General Purpose Switching Application
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
40
30
4
0.02
100
1250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
f
T
Test
conditions
Min
40
30
4
0.5
0.5
40
550
200
MHz
Typ
Max
Unit
V
V
V
μA
μA
I
C
= 0.1mA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=0.1mA,I
C
=0
V
CB
=18V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=6V, I
C
=1mA
V
CE
=6V,I
C
=1mA
CLASSIFICATION OF h
FE
RANK
RANGE
R
40-80
O
70-140
Y
100-200
B,Nov,2011
Typical Characteristics
4
2SC1923
h
FE
—— I
C
COMMON EMITTER
V
CE
= 6V
Static Characteristic
30uA
COMMON
EMITTER
T
a
=25
℃
h
FE
1000
(mA)
27uA
3
24uA
21uA
18uA
T
a
=100
℃
I
C
COLLECTOR CURRENT
DC CURRENT GAIN
2
15uA
12uA
100
T
a
=25
℃
1
9uA
6uA
I
B
=3uA
0
0
2
4
6
8
10
12
14
10
0.01
0.1
1
10
20
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1000
f
T
——
I
C
10
C
ob
/ C
ib
——
V
CB
/
V
EB
f=1MHz
I
E
=0 / I
C
=0
(MHz)
T
a
=25
℃
(pF)
f
T
TRANSITION FREQUENCY
CAPACITANCE
C
C
ib
1
300
C
ob
T
a
=25
℃
100
1
3
10
0.1
1
3
10
V
CE
=6V
COLLECTOR CURRENT
I
C
(mA)
REVERSE VOLTAGE
V
(V)
0.125
P
C
——
T
a
COLLECTOR POWER DISSIPATION
P
C
(W)
0.100
0.075
0.050
0.025
0.000
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
B,Nov,2011
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