JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2SC2130
TRANSISTOR (NPN)
1. EMITTER
FEATURES
High DC Current Gain
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
45
40
5
0.8
600
208
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE
C
ob
f
T
Test
conditions
Min
45
40
5
0.1
0.1
0.1
100
320
0.5
0.8
13
100
V
V
pF
MHz
Typ
Max
Unit
V
V
V
μA
μA
μA
I
C
= 0.1mA,I
E
=0
I
C
=10mA,I
B
=0
I
E
=0.1mA,I
C
=0
V
CB
=35V,I
E
=0
V
CE
=25V,I
B
=0
V
EB
=5V,I
C
=0
V
CE
=1V, I
C
=100mA
I
C
=500mA,I
B
=20mA
V
CE
=1V, I
C
=10mA
V
CB
=10V,I
E
=0, f=1MHz
V
CE
=5V,I
C
=10mA
CLASSIFICATION OF h
FE
RANK
RANGE
O
100-200
Y
160-320
B,Mar,2012
Typical Characteristics
150
2SC2130
h
FE
—— I
C
V
CE
= 1V
T
a
=100 C
o
Static Characteristic
500uA
COMMON
EMITTER
T
a
=25
℃
400uA
h
FE
DC CURRENT GAIN
300uA
250uA
200uA
500
(mA)
450uA
400
100
I
C
350uA
COLLECTOR CURRENT
300
200
50
T
a
=25 C
100
o
150uA
100uA
I
B
=50uA
0
0
1
2
3
4
5
6
0
0.01
0.1
1
10
100
800
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1.2
V
BEsat
—— I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
β=25
300
V
CEsat
——
β=25
I
C
1.0
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
0.8
T
a
=25
℃
200
0.6
0.4
T
a
=100
℃
100
T
a
=100
℃
T
a
=25
℃
0.2
0.0
0.1
1
10
100
800
0
0.1
1
10
100
800
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
300
f
T
——
I
C
C
ob
/ C
ib
200
100
——
V
CB
/
V
EB
f=1MHz
I
E
=0 / I
C
=0
T
a
=25 C
o
(MHz)
250
C
ib
f
T
TRANSITION FREQUENCY
150
CAPACITANCE
C
200
(pF)
10
C
ob
100
50
V
CE
=5V
T
a
=25 C
o
0
10
20
30
40
50
1
0.1
1
10
20
COLLECTOR CURRENT
I
C
(mA)
REVERSE VOLTAGE
V
(V)
V
BE
——
800
I
C
800
P
c
——
T
a
COLLECTOR POWER DISSIPATION
P
c
(mW)
VCE=1V
1.0
1.2
700
I
C
(mA)
100
o
600
COLLECTOR CURRENT
Ta=100 C
10
500
400
Ta=25
℃
1
300
200
100
0.1
0.2
0
0
25
50
75
100
125
150
0.4
0.6
0.8
BASE-EMITTER VOLTAGE
V
BE
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
B,Mar,2012
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