JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
TO-92MOD
2SC2236
FEATURE
TRANSISTOR (NPN)
1. EMITTER
2. COLLECTOR
Complementary to 2SA966 and 3 Watts output Applications.
3. BASE
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
30
30
5
1.5
0.9
150
-55-150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
Test
conditions
Min
30
30
5
0.1
0.1
100
320
2
1
120
V
V
MHz
30
pF
Typ
Max
Unit
V
V
V
µA
µA
I
C
= 1mA , I
E
=0
I
C
= 10mA ,
I
B
=0
I
E
= 1mA, I
C
=0
V
CB
=30V ,
V
EB
=5V ,
V
CE
=2 V,
I
E
=0
I
C
=0
I
C
= 500mA
I
C
= 1.5 A, I
B
= 0.03A
I
C
= 500 mA, V
CE
= 2V
V
CE
= 2V, I
C
= 500mA
V
CB
= 10V, I
E
= 0,f=1MHz
f
T
C
ob
CLASSIFICATION OF h
FE
Rank
Range
O
100-200
Y
160-320
A,Jun,2011
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