JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92
Plastic-Encapsulate Transistors
TO-92
2SC2551
TRANSISTOR (
NPN
)
1. EMITTER
2. COLLECTOR
3.
BASE
FEATURES
High voltage
Low saturation voltage
Small collector output capacitance
Complementary to 2SA1091
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector power dissipation
Junction Temperature
Storage Temperature
Value
300
300
6
100
400
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
Test
conditions
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
Min
300
300
6
0.1
0.1
30
20
0.5
1.2
80
4
V
V
MHz
pF
150
Typ
Max
Unit
V
V
V
μA
μA
Ic=100uA, I
E
=0
Ic=1mA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=300V, I
E
=0
V
EB
=6V, I
C
=0
V
CE
=10V, I
C
=20mA
V
CE
=10V, I
C
=1mA
I
C
=20mA, I
B
=2mA
I
C
=20mA, I
B
=2mA
V
CE
=10V, I
C
=20mA
V
CB
=20V,I
E
=0,f=1MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
R
30-90
O
50-150
A,May,2011
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