Plastic-Encapsulate Transistors
FEATURES
Low Noise: NF=1 dB (Typ),10dB(MAX)
Complementary to 2SA1162
2SC2712
(NPN)
MAXIMUM RATINGS (TA=25
unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
60
50
5
150
150
125
-55 to +150
Unit
V
V
V
mA
mW
1. BASE
2. EMITTER
3. COLLECTO
P
C
T
J
Tstg
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Noise Figure
Symbol
VCBO
VCEO
VEBO
ICB
O
IEB
O
hFE
VCE(sat)
fT
Cob
NF
Test
conditions
Min
60
50
5
Typ
Max
Unit
V
V
V
IC= 100μA, IE=0
IC=1mA ,
IB=0
IE= 100μA, IC=0
VCB= 60 V, IE=0
VEB=5V, IC=0
VCE=6V, IC=2mA
IC= 100mA, IB=10mA
VCE=10V, IC= 1mA
VCB=10V, IE=0,f=1 MHz
VCE=6V,IC=0.1mA,f=1kH
z, Rg=10kΩ
0.1
0.1
70
0.1
80
2.0
1.0
3.5
10
700
0.25
μA
μA
V
MHz
pF
dB
CLASSIFICATION OF
h
FE
LO
70-140
LY
120-240
LG
200-400
LL
350-700
Marking
Range
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P1
Plastic-Encapsulate Transistors
2SC2712
Typical
Characteristics
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P2
电子工程世界
