JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SC2883
FEATURES
Low voltage
TRANSISTOR (NPN)
SOT-89-3L
1.
BASE
2.
COLLECTOR
3.
EMITTER
Unit
V
V
V
A
W
℃
1
2
3
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
30
30
5
1.5
0.5
150
-55~150
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
Test conditions
I
C
=1mA,I
E
=0
I
C
=10mA,I
B
=0
I
E
=1mA,I
C
=0
V
CB
=30V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=2V,I
C
=0.5A
I
C
=1.5A,I
B
=30mA
V
CE
=2V,I
C
=0.5A
V
CE
=2V,I
C
=500mA
V
CB
=10V,I
E
=0,f=1MHz
120
40
100
Min
30
30
5
0.1
0.1
320
2
1
V
V
MHz
pF
Typ
Max
Unit
V
V
V
μA
μA
CLASSIFICATION OF h
FE
Rank
Range
Marking
O
100-200
GO
Y
160-320
GY
A,Jun,2011
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