JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate Transistors
2SC3052
FEATURES
Power dissipation
P
CM
:
0.15
W (Tamb=25℃)
TRANSISTOR (NPN)
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
1. 02
Collector current
0.2
A
I
CM
:
Collector-base voltage
50
V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE(sat)
V
CE
=6V, I
C
=0.1mA
I
C
=100 mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CE
=6V, I
C
= 10mA
180
50
0.
0. 95¡ À 025
2. 80¡ À 05
0.
1. 60¡ À0. 05
unless otherwise specified)
Test
conditions
MIN
50
50
6
0.1
0.1
150
800
TYP
MAX
UNIT
V
V
V
Ic=100
µ
A, I
E
=0
Ic= 100
µ
A, I
B
=0
I
E
=100
µ
A, I
C
=0
V
CB
=50 V , I
E
=0
V
EB
= 6V ,
I
C
=0
0. 35
2. 92¡ À0. 05
1. 9
µ
A
µ
A
V
CE
=6V, I
C
=1mA
0.3
1
V
V
MHz
f
T
CLASSIFICATION OF h
FE(1)
Marking
Range
LE
150-300
LF
250-500
LG
400-800
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