JMnic
Product Specification
Silicon NPN Power Transistors
2SC3090
DESCRIPTION
・With
TO-3PN package
・High
breakdown voltage (V
CBO
≥800V)
・Fast
switching speed
・Wide
ASO（Safe Operating Area）
APPLICATIONS
・500V/10A
Switching Regulator Applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
100
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
800
500
7
10
20
4
2.5
W
UNIT
V
V
V
A
A
A
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE -2
C
OB
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=5mA ;R
BE
=∞
I
C
=1mA ;I
E
=0
I
E
=1mA ;I
C
=0
I
C
=6A; I
B
=1.2A
I
C
=6A; I
B
=1.2A
V
CB
=500V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=1.2A ; V
CE
=5V
I
C
=6A ; V
CE
=5V
I
E
=0 ; V
CB
=10V;f=1MHz
I
C
=1.2A ; V
CE
=10V
15
8
MIN
500
800
7
2SC3090
TYP.
MAX
UNIT
V
V
V
1.0
1.5
10
10
50
V
V
μA
μA
160
18
pF
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=7A; I
B1
=-I
B2
=1.4A
R
L
=28.6Ω,V
CC
=200V
1.0
3.0
1.0
μs
μs
μs
h
FE-1
classifications
L
15-30
M
20-40
N
30-50
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3090
Fig.2 outline dimensions
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3090
4
