JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
2SC3149
TRANSISTOR (NPN)
TO-220-3L
1. BASE
2. COLLECTOR
3. EMITTER
FEATURES
High breakdown voltage(V
CBO
>900V)
Fast switching speed
Wide ASO
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
900
800
7
0.5
2
150
-55-150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
*
Symbol
V
(BR)CBO
V
(BR)CEO
*
*
Test
conditions
Min
900
800
7
Typ
Max
Unit
V
V
V
I
C
=1mA,I
E
=0
I
C
=5mA,I
B
=0
I
E
=1mA,I
C
=0
V
CB
=800V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=5V,I
C
=100mA
V
CE
=5V,I
C
=200mA
V
(BR)EBO
I
CBO
I
EBO
h
FE1*
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
*
*
10
10
10
8
1
1.5
15
30
1.0
40
μA
μA
I
C
=200mA,I
B
=40mA
I
C
=200mA,I
B
=40mA
V
CE
=10V, I
C
=-100mA
V
CB
=10V, I
E
=0,f =1MHz
I
C
=1A,I
B1
=0.2A,I
B2
=-0.4A,
R
L
=400Ω,V
CC
=400V
V
V
MHz
pF
μS
μS
μS
3.0
0.7
pulse test.
CLASSIFICATION OF h
FE1
Rank
Range
K
10-20
L
15-30
M
20-40
A,Jan,2012
Typical Characteristics
2SC3149
A,Jan,2012
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