NPN SILICON RF TRA
N
N
ANSISTOR
3
·U
Ultra high fre
equency low noise trans
w
sistor
·S
ilicon epitax bipolar p
xial
process.
High power g
gain, low no figure,
oise
·H
·hi
dynamic range and ideal curren characteris
igh
c
nt
stics,
·S
C-59 chip p
package, mai
inly used in VHF, UHF and CATV
igh
cy
d
amplifier.
·hi
frequenc wideband low noise a
2
1
SC
C-59
Fea
ature
High gain:︱S
21
e
︱
2
TYP. Value is 11d
h
1
dB
Low noise: NF
w
.
5dB
TYP. Value is 1.5
f
T
(T
TYP.)
:
TYP Value is 7G
P.
GHz
1：Ba
ase
2：Em
mitter
3：C
Collector
@
V
CE
=10V，I
C
=20mA，f=1GHz
@
V
CE
=10V，I
C
=7mA， f=1GHz
@
V
CE
=10V，I
C
=20mA，f=1GHz
Abs
solute Maximum Rati
ings
T
A
=25℃ Unless Otherw noted
℃
wise
PAR
RAMETER
SYMBLE
E
MAXIM
MUM VALUE
U
UNIT
Coll
lector-base b
breakdown vo
oltage
Coll
lector-emitte breakdown voltage
er
n
Emi
itter-base bre
eakdown volt
tage
Coll
lector curren
nt
Coll
lector Power Dissipation
r
Junc
ction Temper
rature
Stor
rage Tempera
ature
V
CBO
V
CEO
V
EBO
I
C
P
D
T
j
T
stg
20
12
3
100
200
150
-65
~
+150
℃
V
V
V
m
mA
m
mW
℃
T
stg
E
ation (@VC
CE=10V,IC
C=20mA)
hFE Classifica
B
C
Cla
assification
Marking
M
R24
R
hFE
90-
-140
130-1
180
D
R25
170-250
1 of 3
ELE
ECTRICAL CHARACTERISTICS (
a
=25
℃
unl otherwis specified)
(T
less
se
PARA
AMETER
SY
YMBLE
MIN.
M
TYP.
MAX.
UNIT
U
V
TEST CO
ONDITION
Col
llector-base b
breakdown v
voltage
Collector c
cut-off curren
nt
Emitter cu
ut-off curren
nt
Transit frequency
Output feed
dback capacit
tor
Pow gain
wer
Nois factor
se
V
CBO
I
CBO
I
EBO
f
T
Cre
| S
21
e
|
2
NF
20
0.1
0.1
5
7
0.65
11
1.5
μA
μA
GHz
pF
dB
dB
I
C
=1
1.0μA
V
CB
=10V
B
V
EB
=1V
B
V
CE
=10V
C
=20mA
V,I
VC
CB=10V,IE=
=0mA,f=1M
MHz
V
CE
=10V,I
C
=20mA,f=1G
=
GHz
V
CE
=10V,I
C
=7mA,f=1G
=
GHz
PAC
CKAGE：SC
C-59
1:（
（Base）
2:
（Emitter）
3:（Coll
lector）
2 of 3
Typical characteristic curv (TA =25℃)
y
c
ves
3 of 3
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