Plastic-Encapsulate Transistors
2SC3357
DESCRIPTION
·Low
Noise and High Gain
NF = 1.1 dB TYP., G
a
= 8.0 dB TYP.
@V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
NF = 1.8 dB TYP., G
a
= 9.0 dB TYP.
@V
CE
= 10 V, I
C
= 40 mA, f = 1.0 GHz
(NPN)
APPLICATIONS
·Designed
for low noise amplifier at VHF, UHF and CATV
band.
1. BASE
2. COLLECTO
3 EMITTER
SOT-89
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
20
V
V
CEO
Collector-Emitter Voltage
12
V
V
EBO
Emitter-Base Voltage
3.0
V
I
C
Collector Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
0.1
A
P
C
1.2
W
T
J
150
℃
T
stg
Storage Temperature Range
-65~150
℃
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P4 -P1
Plastic-Encapsulate Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SC3357
MAX
UNIT
I
CBO
Collector Cutoff Current
V
CB
= 10V; I
E
= 0
1.0
μA
I
EBO
Emitter Cutoff Current
V
EB
= 1V; I
C
= 0
1.0
μA
h
FE
DC Current Gain
I
C
= 20mA ; V
CE
= 10V
50
300
f
T
Current-Gain—Bandwidth Product
I
C
= 20mA ; V
CE
= 10V
6.5
GHz
C
re
︱
S
21e
︱
2
Feed-Back Capacitance
I
E
= 0 ; V
CB
= 10V;f= 1.0MHz
0.65
1.0
pF
Insertion Power Gain
I
C
= 20mA ; V
CE
= 10V;f= 1.0GHz
9
dB
NF
Noise Figure
I
C
= 7mA ; V
CE
= 10V;f= 1.0GHz
1.1
dB
NF
Noise Figure
I
C
= 40mA ; V
CE
= 10V;f= 1.0GHz
1.8
3.0
dB
h
FE
Classification
Marking
h
FE
RH
50-100
RF
80-160
RE
125-250
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P4 -P2
Plastic-Encapsulate Transistors
2SC3357
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P4 -P3
Plastic-Encapsulate Transistors
2SC3357
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P4 -P4
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