JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
2SC4177
FEATURES
High DC Current Gain
Complementary to 2SA1611
High Voltage
APPLICATIONS
General Purpose Amplification
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
50
5
100
150
833
150
-55½+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
TRANSISTOR (NPN)
SOT–323
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
V
CE(sat)
V
BE(sat)
V
BE
f
T
C
ob
Test conditions
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=1mA
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CE
=6V, I
C
=1mA
V
CE
=6V, I
C
=10mA
V
CB
=6V, I
E
=0, f=1MHz
0.55
250
3
90
Min
60
50
5
100
100
600
0.3
1
0.65
V
V
V
MHz
pF
Typ
Max
Unit
V
V
V
nA
nA
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
CLASSIFICATION OF
h
FE
RANK
RANGE
MARKING
L4
90–180
L4
L5
135–270
L5
L6
200–400
L6
L7
300–600
L7
A,Oct,2010
Typical Characterisitics
Static Characteristic
9
8
1000
2SC4177
h
FE
——
I
C
COMMON EMITTER
V
CE
=6V
COMMON
EMITTER
T
a
=25
℃
20uA
18uA
16uA
14uA
12uA
h
FE
T
a
=100
℃
T
a
=25
℃
300
(mA)
I
C
7
6
5
4
3
2
1
0
0
2
4
6
8
COLLECTOR CURRENT
10uA
8uA
6uA
4uA
I
B
=2uA
10
DC CURRENT GAIN
100
1
10
100
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
0.20
V
CEsat
β=10
——
I
C
1.2
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
0.15
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
0.8
T
a
=25
℃
0.10
T
a
=100
℃
0.4
T
a
=100
℃
0.05
T
a
=25
℃
β=10
0.00
1
10
100
0.0
1
10
100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
100
——
V
BE
100
C
ob
/ C
ib
——
V
CB
/ V
EB
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
COMMON EMITTER
V
CE
=6V
(mA)
T
a
=100
℃
(pF)
COLLECTOR CURRENT
I
C
10
C
ib
C
ob
T
a
=25
℃
10
CAPACITANCE
0.4
0.6
0.8
1.0
C
1
0.1
0.1
1
0.2
1
10
20
BASE-EMMITER VOLTAGE V
BE
(V)
REVERSE VOLTAGE
V
(V)
200
P
C
——
T
a
COLLECTOR POWER DISSIPATION
P
C
(mW)
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
A,Oct,2010
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