JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
2SC4548
TRANSISTOR (NPN)
1. BASE
FEATURES
Small Flat Package
High Breakdown Voltage
Excellent h
FE
Linearity
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
400
400
5
200
500
250
150
-55~+150
2. COLLECTOR
3. EMITTER
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Test conditions
I
C
=10µA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=10µA,I
C
=0
V
CB
=300V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=10V, I
C
=50mA
I
C
=50mA,I
B
=5mA
I
C
=50mA,I
B
=5mA
V
CE
=30V,I
C
=10mA
V
CB
=30V, I
E
=0, f=1MHz
70
4
60
Min
400
400
5
0.1
0.1
200
0.6
1
V
V
MHz
pF
Typ
Max
Unit
V
V
V
µA
µA
CLASSIFICATION OF
h
FE
RANK
RANGE
MARKING
D
60–120
CN
E
100–200
A,Nov,2010
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