JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2S
D1664
TRANSISTOR (NPN)
SOT-89-3L
1.
BASE
2.
COLLECTOR
3.
EMITTER
1
2
3
FEATURES
Low V
CE(sat)
, V
CE(sat)
=0.15V(typical).(I
C
/I
B
=500mA/50mA)
Complements to 2SB1132
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base
Voltage
Value
40
32
5
1
500
150
-55~150
Unit
V
V
V
A
mW
℃
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector power dissipation
Junction Temperature
Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test conditions
I
C
=50μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50μA, I
C
=0
V
CB
=20V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=3V, I
C
=100mA
I
C
=0.5A, I
B
=50mA
V
CE
=5V, I
C
=50mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
150
15
82
Min
40
32
5
0.5
0.5
390
0.4
V
MHz
pF
Typ
Max
Unit
V
V
V
μA
μA
CLASSIFICATION OF h
FE
Rank
Range
Marking
P
82-180
DAP
Q
120-270
DAQ
R
180-390
DAR
B,Jan,2012
Typical Characteristics
150
2SD1664
h
FE
—— I
C
T
a
=100
℃
Static Characteristic
0.80mA
0.72mA
COMMON
EMITTER
T
a
=25
℃
h
FE
DC CURRENT GAIN
300
(mA)
125
100
I
C
0.64mA
0.56mA
200
COLLECTOR CURRENT
T
a
=25
℃
75
0.48mA
0.40mA
50
0.32mA
0.24mA
100
25
0.16mA
I
B
=0.08mA
COMMON EMITTER
V
CE
= 3V
COLLECTOR CURRENT
0.01
0.1
0
0
2
4
6
8
0
1E-3
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
I
C
(A)
1
1.2
V
BEsat
——
β=10
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
1000
V
CEsat
——
β=10
I
C
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
0.8
T
a
=25
℃
T
a
=100
℃
0.4
100
T
a
=100
℃
T
a
=25
℃
0.0
1E-3
0.01
0.1
1
10
1E-3
0.01
0.1
1
COLLECTOR CURRENT
I
C
(A)
COLLECTOR CURRENT
I
C
(A)
500
f
T
——
I
C
1000
C
ob
/ C
ib
——
V
CB
/
V
EB
f=1MHz
I
E
=0 / I
C
=0
T
a
=25
℃
(MHz)
300
f
T
(pF)
TRANSITION FREQUENCY
CAPACITANCE
100
C
100
C
ib
C
ob
10
30
V
CE
=5V
T
a
=25
℃
10
3
10
100
1
0.1
1
10
20
COLLECTOR CURRENT
I
C
(mA)
REVERSE VOLTAGE
V
(V)
600
P
C
——
T
a
COLLECTOR POWER DISSIPATION
P
C
(mW)
500
400
300
200
100
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
B,Jan,2012
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