UNISONIC TECHNOLOGIES CO., LTD
2SD1857
POWER TRANSISTOR
FEATURES
* High breakdown voltage.(BV
CEO
=120V)
* Low collector output capacitance.(Typ.20pF at V
CB
=10V)
* High transition frequency.(f
T
=80MHz)
NPN EPITAXIAL SILICON TRANSISTOR
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SD1857L-x-T60-K
2SD1857G-x-T60-K
2SD1857L-x-T6S-K
2SD1857G-x-T6S-K
2SD1857L-x-TM3-T
2SD1857G-x-TM3-T
2SD1857L-x-T92-B
2SD1857G-x-T92-B
2SD1857L-x-T92-K
2SD1857G-x-T92-K
2SD1857L-x-T9N-B
2SD1857G-x-T9N-B
2SD1857L-x-T9N-K
2SD1857G-x-T9N-K
Note: Pin Assignment: E: Emitter C: Collector B: Base
Package
TO-126
TO-126S
TO-251
TO-92
TO-92
TO-92NL
TO-92NL
Pin Assignment
1
2
3
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
E
C
B
Packing
Bulk
Bulk
Tube
Tape Box
Bulk
Tape Box
Bulk
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2SD1857
MARKING
TO-126 / TO-126C
NPN EPITAXIAL SILICON TRANSISTOR
TO-251
TO-92
TO-92NL
L: Lead Free
G: Halogen Free
Data Code
UTC
2SD1857
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QW-R201-057. I
2SD1857
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
TO-126/TO-126S
TO-92
TO-92 NL
TO-251
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°C, unless otherwise specified)
SYMBOL
V
CBO
V
CEO
V
EBO
RATINGS
120
120
5
1.4
0.625
0.9
2
2
3
UNIT
V
V
V
Collector Power Dissipation
P
C
W
Collector Current
Collector Current
I
C
I
CP
A
A
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
Note: Measured using pulse current.
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
f
T
C
OB
TEST CONDITIONS
MIN
I
C
=50µA
120
I
C
=1mA
120
I
E
=50µA
5
V
CB
=100V
V
EB
=4V
V
CE
=5V, I
C
=0.1A
82
I
C
=/I
B
=1A/0.1A (Note)
V
CE
=5V, I
E
= -0.1A, f=30MHz.
V
CB
=10V, I
E
=0A, f=1MHz (Note)
TYP MAX UNIT
V
V
V
1
µA
1
µA
390
0.4
V
80
MHz
20
pF
CLASSIFICATION OF h
FE
RANK
RANGE
P
82-180
Q
120-270
R
180-390
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2SD1857
TYPICAL CHARACTERISTICS
NPN EPITAXIAL SILICON TRANSISTOR
1.0
10mA
1000
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
500
DC Current Fain: h
FE
T
A
=25°C
V
CE
=10V
Collector Current: I
C
(A)
0.8
0.6
0.4
200
100
50
20
10
5
5V
0.2
0
I
B
=0mA
0
1
2
3
4
5
Collector to Emitter Voltage: V
CE
(V)
T
A
=25°C
2
1
0.01 0.02 0.05 0.1 0.2 0.5 1 2
Collector Current,I
C
(A)
5 10
10
Collector Saturation Voltage:
V
CE(SAT)
(V)
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.01 0.02 0.05
0.1 0.2
0.5
1
2
5 10
Collector Current,I
C
(A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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