DONGGUAN NANJING ELECTRONICS LTD.,
SOT-89-3L Plastic-Encapsulate Transistors
2SD2391
TRANSISTOR (NPN)
SOT-89-3L
FEATURES
Low V
CE(sat)
Marking: DT
1.BASE
2.COLLECTOR
3.EMITTER
123
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
60
6
2
0.5
150
-55-150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
f
T
C
ob
Test conditions
I
C
=50μA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=50μA,I
C
=0
V
CB
=50V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=2V,I
C
=0.5A
V
CE
=2V,I
C
=1.5A
I
C
=1A,I
B
=50mA
V
CE
=2V,I
C
=0.5A, f=100MHz
V
CB
=10V,I
E
=0, f=1MHz
210
21
120
45
0.35
V
MHz
pF
Min
60
60
6
0.1
0.1
270
Typ
Max
Unit
V
V
V
μA
μA
A,Jun,2011
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