2SD965
NPN Silicon Epitaxial Planar Transistor
for low-frequency power and stroboscope
applications.
The transistor is subdivided into three
groups P, Q and R, according to its DC
current gain.
On special request, these transistors can be
manufactured in different pin configurations.
Features
․
Low collector-emitter saturation voltage
․
Satisfactory operation performances at high
efficiency with the low voltage power supply
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta=25
o
C)
Symbol
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Peak Collector Current
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
tot
T
j
T
S
Value
40
20
7
8
5
750
150
-55 to +150
Unit
V
V
V
A
A
mW
O
O
C
C
2SD965
Characteristics at T
amb
=25
O
C
Symbol
DC Current Gain
at V
CE
=2V, I
C
=0.5A
P
Q
R
at V
CE
=2V, I
C
=1A
Collector Cutoff Current
at V
CB
=10V
Collector Cutoff Current
at V
CE
=10V
Emitter Cutoff Current
at V
EB
=7V
Collector Output Capacitance
at V
CB
=20V, f=1MHz
(Common base, input open circuited)
Collector to Emitter Voltage
at I
C
=1mA
Emitter to Base Voltage
at I
E
=10μA
Collector to Emitter Saturation Voltage
at I
C
=3A, I
B
=0.1A
Current Gain Bandwidth Product
at V
CB
=6V, I
E
= -50mA, f=200MHz
f
T
-
150
-
MHz
V
CE(sat)
-
0.28
1
V
V
EBO
7
-
-
V
V
CEO
20
-
-
V
Cob
-
26
50
pF
I
EBO
-
-
0.1
μA
I
CEO
-
-
1.0
μA
I
CBO
-
-
0.1
μA
h
FE
h
FE
h
FE
h
FE
120
230
340
150
-
-
-
-
250
380
600
-
-
-
-
-
Min.
Typ.
Max.
Unit
2SD965
P
C
- Ta
1000
2.4
Ta=25 C
I
B
=7mA
6mA
I
C - V
CE
6
V
CE
=2V
I
C - V
BE
800
2.0
5
Ta= 75 C
25 C
1.6
600
P
C, mW
I
C, A
5mA
4
-25 C
400
0.8
3mA
I
C, A
1.2
4mA
3
2
2mA
200
0.4
1mA
1
0
0
40
80
Ta ( C)
120
160
0
0
0.4
0.8
1.2
V
CE
, V
1.6
2.0
2.4
0
0
0.4
0.8
1.2
1.6
2.0
V
BE
, V
V
CE(sat)
- I
C
10
IC/IB=30
V
BE(sat)
- I
C
100
IC/IB=30
h
FE
- I
C
600
V
CE
=2V
Ta=25 C
500
1
10
400
V
BE(sat)
, V
V
CE(sat)
, V
Ta= 75 C
25 C
Ta= -25 C
75 C
25 C
Ta= 75 C
25 C
-25 C
h
FE
0.1
1
300
200
0.01
0.1
100
-25 C
0.001
0.01
0.1
1
10
0.01
0.01
0.1
1
10
0
0.01
0.1
1
10
COLLECTOR CURRENT, A
COLLECTOR CURRENT, A
COLLECTOR CURRENT, A
f
T
-
I
E
400
100
COLLECTOR OUTPUT CAPACITANCE, pF
(COMMON BASE, INPUT OPEN CIRCUITED)
Cob - V
CB
100
I
E
=0
f=1MHz
Ta=25 C
V
CB
=6V
Ta=25 C
S
AFE OPERATION AREA
Single pulse
Ta=25 C
80
300
10
I
CP
I
C
t=1s
f
T, MHz
60
IC, A
t=10ms
200
1
40
0.1
20
100
0
-0.01
0
-0.1
-1
-10
1
10
VCB, V
100
0.01
0.1
1
VCE, V
10
100
I
E, A
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