30P55
DESCRIPTION
The 30P55 uses advanced trench technology
And design to provide excellent
Low
gate charge .
RDS (ON ) with
V
DS
-55V
R
DS(ON)
--
I
D
-30A
It can be used in a wide
Vanety of applications .
GENERAL FEATURES
½
V
DS
= -55 V, I
D
= -30 A
R
DS(ON)
< 40 mΩ @ V
GS
=-10 V
½
½
½
½
½
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stabilty and unifomity with high E
AS
Excellent package for good heat dissipation
Special process technology for high ESD capability
TO-252-2L top view
Application
½
½
½
Power switching application
Hard Switched and High Frequency Circuits
Ordering Information
PART NUMBER
PACKAGE
BRAND
30P55
Uninterruptible Power Supply
TO-252-2L
OGFD
www.goford.cn
TEL：0755-86350980
FAX：0755-86350963
30P55
Absolute Maximum Ratings (TC=25℃, unless otherwise noted)
Symbol
V
DS
I
D
I
DM
P
D
V
GS
E
AS
T
J
and T
STG
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Drain Current-Continuous(Tc=100
℃)
Pulsed Drain Current
Power Dissipation
Gate-to-Source Voltage
Single PulseAvalanche Energy
Operating Junction and Storage Temperature Range
30P55
-55
-30
-21
110
90
± 20
260
-55 to 150
W
V
mJ
℃
A
Units
V
Thermal Resistance
Symbol
R
θJC
Parameter
Junction-to-Case
Min.
--
Typ.
--
Max.
1.39
Units
℃/W
Test Conditions
Water cooled heatsink, PD adjusted for
a peak junction temperature of +150℃.
OFF Characteristics TJ=25℃ unless otherwise specified
Symbol
B
VDSS
I
GSS
I
DSS
Parameter
Drain-to-Source
Voltage
Breakdown
Min.
-55
--
--
Typ.
--
--
--
Max.
--
±100
1
Units
V
nA
µA
Test Conditions
V
GS
=0, I
D
=250µA
V
DS
=0V, V
GS
=±20V
V
DS
=-55V, V
GS
=0V
Gate-to-Source Forward Leakage
Zero Gate Voltage Drain Current
ON Characteristics TJ=25℃ unless otherwise specified
Symbol
R
DS(ON)
V
GS(TH)
G
fs
Parameter
Static Drain-to-Source
On-Resistance
Gate Threshold Voltage, Figure 12.
Forward Transconductance
Min.
--
-2
8
Typ.
30
-3
---
Max
40
-4
--
Units
mΩ
V
S
Test Conditions
V
GS
=-10V,I
D
=-15A
V
DS
= V
GS
, I
D
=-250µA
V
DS
=-25V, I
D
=-16A
www.goford.cn
TEL：0755-86350980
FAX：0755-86350963
30P55
Dynamic Characteristics Essentially independent of operating temperature
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Min.
--
--
--
--
--
--
Typ.
3500
240
153
56
11
24
Max.
--
--
--
--
--
--
nC
V
DS
=-44V, V
GS
=-10V,
I
D
=-16A
pF
V
DS
=-30V,V
GS
=0V,
f=1.0MHZ
Units
Test Conditions
Drain-Source Diode Characteristics
Diode Forward Voltage
Diode Forward Current
Reverse Recovery Time
Reverse Recovery Charge
Forword Turn-On Time
V
SD
I
S
t
rr
Q
rr
t
on
V
GS
=0V,I
S
=-24A
--
TJ=25℃,IF=-15A
Di/dt = 100 A/µs
--
--
--
--
--
--
--
--
1.2
-30
71
170
V
A
nS
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD
Notes:
1.
2.
3.
4.
5.
Repetitive Rating:Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board, t
≤10
sec.
Pulse Test:Pulse Width
≤
300µs, Duty Cycle
≤
2%.
Guaranteed by design, not subject to production.
EAS condition: Tj=25℃,VDD=-25V,VG=-20V,L=0.5mH,Rg=25Ω.
www.goford.cn
TEL：0755-86350980
FAX：0755-86350963
30P55
Test circuit
1）E
AS
test Circuits
2）Gate charge test Circuit:
3）Switch Time Test Circuit：
www.goford.cn
TEL：0755-86350980
FAX：0755-86350963
30P55
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)
Normalized On-Resistance
-I
D
- Drain Current (A)
-Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 1 Output Characteristics
Figure 4 Rdson-JunctionTemperature
-Vgs Gate-Source Voltage (V)
Vgs Gate-Source Voltage (V)
-I
D
- Drain Current (A)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Rdson On-Resistance Normalized
Figure 5 Gate Charge
-I
D
- Drain Current (A)
I
s
- Reverse Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
www.goford.cn
TEL：0755-86350980
FAX：0755-86350963
电子工程世界
