JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DG3332
FEATURES
Low Current
High Voltage
APPLICATIONS
Video
Telephony
Professional Communication Equipment
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
180
160
6
0.7
625
200
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
TRANSISTOR (NPN)
TO – 92
1.EMITTER
2. COLLECTOR
3.BASE
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)(1)
V
BE (sat)
f
T
C
ob
Test
conditions
Min
180
160
6
0.1
0.1
100
80
0.4
1.2
120
8
V
V
MHz
pF
400
Typ
Max
Unit
V
V
V
μA
μA
I
C
= 0.01mA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=0.01mA,I
C
=0
V
CB
=120V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=5V, I
C
=100mA
V
CE
=5V, I
C
=10mA
I
C
=250mA,I
B
=25mA
I
C
=250mA,I
B
=25mA
V
CE
=10V,I
C
=50mA
V
CB
=10V,I
E
=0, f=1MHz
CLASSIFICATION OF h
FE(1)
RANK
RANGE
R
100-200
S
140-280
T
200-400
A,Feb,2012
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