DATA SHEET
3EZ6.8~3EZ100
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES
3.0 Watts
VOLTAGE
POWER
6.8 to 100 Volts
FEATURES
• Low profile package
1.0(25.4)MIN.
DO-15
Unit: inch(mm)
• Built-in strain relief
• Glass passivated iunction
• Low inductance
• Typical I
D
less than 1.0µA above 11V
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
.034(.86)
.028(.71)
.300(7.6)
environment substance directive request
.230(5.8)
• High temperature soldering : 260°C /10 seconds at terminals
• Pb free product are available : 99% Sn above can meet RoHS
MECHANICALDATA
Case: JEDEC DO-15, Molded plastic over passivated junction
Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
Polarity: Color band denotes positive end (cathode)
Standard packing: 52mm tape
Weight: 0.015 ounce, 0.04 gram
1.0(25.4)MIN.
.140(3.6)
.104(2.6)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
P ar m et r
a
e
N e
P w ak P ul e P ow erD i si aton on TA =50
O
C ( ot s A )
s
s p i
D er t above 70
O
C
ae
P eak For ar S ur e C urent8. m s si gl hal si e- ave
w d
g
r
3
n e
f n w
superm posed on r t d l ad ( E D E C m et od)
i
ae o
J
h
O per tng Juncton and S t r ge Tem per t r R ange
ai
i
oa
aue
S ym bol
Val e
u
3.
0
24.
0
15
- 5 t + 150
5 o
U nis
t
W ats
t
m W /
O
C
A m ps
O
P
D
I
FSM
T
J
,
STG
T
C
NOTES:
A.Mounted on 5.0mm2 (.013mm thick) land areas.
B.Measured on8.3ms, and single half sine-wave or equivalent square wave ,duty cycle=4 pulses per minute maximum
REV.0-JUN.9.2005
PAGE . 1
N o m i na l Ze ne r V o l t a g e
Part Number
No m. V
3.0 Watt ZENER
3EZ6.8
3EZ7.5
3EZ8.2
3EZ8.7
3EZ9.1
3EZ10
3EZ11
3EZ12
3EZ13
3EZ14
3EZ15
3EZ16
3EZ17
3EZ18
3EZ19
3EZ20
3EZ22
3EZ24
3EZ25
3EZ27
3EZ28
3EZ30
3EZ33
3EZ36
3EZ39
3EZ43
3EZ47
3EZ51
3EZ56
3EZ60
3EZ62
3EZ68
3EZ75
3EZ82
3EZ87
3EZ91
3EZ100
6.8
7.5
8.2
8.7
9.1
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
22.0
24.0
25.0
27.0
28.0
30.0
33.0
36.0
39.0
43.0
47.0
51.0
56.0
60.0
62.0
68.0
75.0
82.0
87.0
91.0
100.0
6.46
7.13
7.79
8.27
8.65
9.50
10.45
11.4
12.35
13.3
14.25
15.2
16.15
17.1
18.05
19.0
20.9
22.8
23.75
25.65
26.6
28.5
31.35
34.2
37.05
40.85
44.65
48.45
53.20
57.00
58.90
64.60
71.25
77.90
82.65
86.45
95.00
7.14
7.88
8.61
9.14
9.56
10.5
11.55
12.6
13.65
14.7
15.75
16.8
17.85
18.9
19.95
21.0
23.1
25.2
26.55
28.35
29.4
31.5
34.65
37.8
40.95
45.15
49.35
53.55
58.8
63.0
65.1
71.4
78.75
86.1
91.35
95.55
105
2.0
2.0
2.0
2.0
3.0
4.0
4.0
5.0
5.0
5.0
6.0
6.0
6.0
6.0
7.0
7.0
8.0
9.0
10
10
12.0
16.0
20.0
22.0
28.0
33.0
38.0
45.0
50.0
53.0
55.0
70.0
85.0
95.0
100
115
160
V
Z
@ I
ZT
M i n. V
M a x. V
Z
ZT
@ I
ZT
O hm s
M a x i m u m Z e n e r Im p e d a n c e
I
ZT
mA
Z
ZK
@ I
ZK
O hm s
I
ZK
mA
Max Reverse
Leakage Current
I
R
@V
R
µA
V
Marking
C ode
110.0
100.0
91.0
85.0
82.0
75.0
68.0
63.0
58.0
53.0
50.0
47.0
44.0
42.0
40.0
37.0
34.0
31.0
30.0
28.0
27.0
25.0
23.0
21.0
19.0
17.0
16.0
15.0
13.0
12.5
12.0
11.0
10.0
9.1
8.5
8.2
7.5
700
700
700
700
700
700
700
700
700
700
700
700
750
750
750
750
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
2000
3000
3000
3000
3000
1.00
0.50
0.50
0.50
0.50
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
5.0
5.0
5.0
4.0
3.0
3.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
4.0
5.0
6.0
6.6
7.0
7.6
8.4
9.1
9.9
10.6
11.4
12.2
13.0
13.7
14.4
15.2
16.7
18.2
19.0
20.6
21.0
22.5
25.1
27.4
29.7
32.7
35.8
38.8
42.6
45.6
47.1
51.7
56.0
62.2
66.1
69.2
76.0
3EZ6.8
3EZ7.5
3EZ8.2
3EZ8.7
3EZ9.1
3EZ10
3EZ11
3EZ12
3EZ13
3EZ14
3EZ15
3EZ16
3EZ17
3EZ18
3EZ19
3EZ20
3EZ22
3EZ24
3EZ25
3EZ27
3EZ28
3EZ30
3EZ33
3EZ36
3EZ39
3EZ43
3EZ47
3EZ51
3EZ56
3EZ60
3EZ62
3EZ68
3EZ75
3EZ82
3EZ87
3EZ91
3EZ100
REV.0-JUN.9.2005
PAGE . 2
1000
500
300
200
100
50
30
20
10
APPLICATION NOTE:
Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determinejunction
temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended:
Lead Temperature, T
L
, should be determined from:
T
L
=
q
LA P
D
+ T
A
O
q
L
A
is the lead-to-ambient thermal resistance ( C/W) and Pd is the power dissipation. The value for
q
L
A
will vary and depends
on the device mounting method.
q
L
A
is generally 30-40
O
C/W for the various clips and tie points in common use and for printed
circuit board wiring.
The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie poin
The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges
generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of
TL, the junction temperature may be determined by:
T
J
= T
L
+
D
T
JL
D
T
JL
is the increase in junction temperature above the lead temperature and may be found from Figure 2 for a train of power puls
or from Figure 10 for dc power.
D
T
JL
=
q
J
L
P
D
For worst-case design, using expected limits of I
Z
, limits of P
D
and the extremes of T
J
(
D
T
J
) may be estimated. Changes in volta
V
Z
, can then be found from:
D
V =
q
V
Z
D
T
J
q
V
Z
, the zener voltage temperature coefficient, is found from Figures 5 and 6.
Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resis
For best regulation, keep current excursions as low as possible.
Data of Figure 2 should not be used to compute surge capa-bility. Surge limitations are given in Figure 3. They are lower than w
be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in s
spots resulting in device degradation should the limits of Figure 3 be exceeded.
REV.0-JUN.9.2005
PAGE . 3
REV.0-JUN.9.2005
PAGE . 4
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