3VD182600YL
3VD182600YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
Ø
3VD182600YL is a High voltage N-Channel
enhancement mode power MOS-FET chip fabricated
in advanced silicon epitaxial planar technology.
Ø
Ø
Ø
Ø
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Advanced termination scheme to provide enhanced
voltage-blocking capability.
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to
a Discrete Fast Recovery Diode
The chips may packaged in TO-92DT-3L type and the
typical equivalent product is 1N60C.
The packaged product is widely used in AC-DC
power suppliers, DC-DC converters and H-bridge
PWM motor drivers.
Ø
Ø
Die size: 1.90mm*1.75mm.
Chip Thickness: 300±20µm.
Top metal : Al, Backside Metal : Ag.
CHIP TOPOGRAPHY
Ø
ABSOLUTE MAXIMUM RATINGS (T
amb
=25°C)
Parameter
Drain-Source voltage
Gate-Source Voltage
Drain Current
Operation Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
TJ
Tstg
Ratings
600
±30
800
150
-55-150
Unit
V
V
mA
ELECTRICAL CHARACTERISTICS (T
amb
=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Source-Drain Diode Forward on
Voltage
Symbol
V(BR)DSS
Vth(GS)
lGSS
IDSS
RDS(on)
VFSD
Test conditions
ID=250uA
ID=250uA VDS=VGS
VGS=±30V, VDS=0V
VDS=600V, VGS=0V
ID=0.5A, VGS=10V
ID=1.0A,VGS=0V
Min
600
2
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Typ
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Max
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4
±100
1
12
1.50
V
Unit
V
V
nA
µA
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2007.08.02
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