3VD186700YL
3VD186700YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
3VD186700YL is a High voltage N-Channel
enhancement mode power MOS-FET chip fabricated in
advanced silicon epitaxial planar technology.
Advanced termination scheme to provide enhanced
voltage-blocking capability.
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
The chips may packaged in TO-251-3L type and the
typical equivalent product is 1N70.
The packaged product is widely used in AC-DC power
suppliers, DC-DC converters and H-bridge PWM motor
drivers.
Die size: 1.96mm*1.78mm.
Chip Thickness: 300±20μm.
Top metal: Al, Backside Metal: Ag.
CHIP TOPOGRAPHY
ABSOLUTE MAXIMUM RATINGS
(T
amb
=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Operation Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
T
J
T
stg
Ratings
700
±30
1.0
150
-55-150
Unit
V
V
A
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Source-Drain Diode Forward On
Voltage
Symbol
V
(BR)DSS
V
th(GS)
l
GSS
I
DSS
R
DS(on)
V
FSD
Test conditions
V
GS
= 0V, I
D
=250μA
I
D
=250μA ,V
DS
=V
GS
V
GS
=±30V, V
DS
=0V
V
DS
=700V, V
GS
=0V
I
D
=0.4A, V
GS
=10V
I
D
=1.0A,V
GS
=0V
Min.
700
2.0
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Typ.
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Max.
----
4.0
±100
1.0
14.5
1.4
Unit
V
V
nA
µA
Ω
V
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2008.10.15
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