3VD297600YL
3VD297600YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
3VD297600YL is a High voltage N-Channel
enhancement mode power MOS-FET chip fabricated in
advanced silicon epitaxial planar technology.
Advanced termination scheme to provide enhanced
voltage-blocking capability.
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
The chips may packaged in TO-220 type and the typical
equivalent product is 4N60.
The packaged product is widely used in AC-DC power
suppliers, DC-DC converters and H-bridge PWM motor
drivers.
Die size: 3.2mm*2.76mm.
Chip Thickness: 300±20μm.
Top metal: Al, Backside Metal: Ag.
CHIP TOPOGRAPHY
ABSOLUTE MAXIMUM RATINGS
(T
amb
=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (TO-220 Package)
Operation Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
P
D
T
J
Tstg
Ratings
600
±30
4.0
100
-55½+150
-55½+150
Unit
V
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
=25°C)
Parameter
Drain -Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source Leakage Current
Static Drain- Source On State
Resistance
Gate-Source Leakage Current
Source-Drain Diode Forward on
Voltage
Symbol
B
VDSS
V
TH
I
DSS
R
DS(on)
I
GSS
V
FSD
Test conditions
V
GS
=0V, I
D
=250µA
V
GS
= V
DS
, I
D
=250µA
V
DS
=600V, V
GS
=0V
V
GS
=10V, I
D
=2.0A
V
GS
=±30V, V
DS
=0V
I
S
=4.0A, V
GS
=0V
Min.
600
2.0
--
--
--
--
Typ.
--
--
--
--
--
--
Max.
--
4.0
1.0
2.4
±100
1.4
Unit
V
V
µA
Ω
nA
V
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2008.10.15
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