640
200V N-Channel MOSFET
GENERAL DESCRIPTION
This Power MOSFET is produced using
advanced planar stripe DMOS
technology.This advanced technology has
been especially tailored to minimize on-state
resistance, provide superior switching
performance, and withstand high energy
pulse in the avalanche and commutation
mode. These devices are well suited for high
efficiency switched mode power supplies,
active power factor correction based on half
bridge topology.
V
DSS
200V
R
DS(ON)
0.18
Ω
I
D
18A
Features
• 18A, 200V, RDS(on) = 0.18Ω @VGS = 10 V
• Low gate charge ( typical 40nC)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
640
TO-220
0GFD
PART NUMBER
PACKAGE
BRAND
Ordering Information
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640
Absolute Maximum Rating
s
Symbol
V
DSS
TC = 25°Cunless otherwise noted
Parameter
Drain-Source Voltage
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
640
200
18
12
72
± 30
432
640F
Units
V
I
D
18
12
72
A
A
A
V
mJ
I
DM
V
GSS
E
AS
(Note 1)
(Note 2)
E
AR
Repetitive Avalanche Energy
(Note 1)
13.9
mJ
dv/dt
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 3)
5.5
V/ns
139
1.11
43
0.34
W
W/°C
°C
P
D
Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes,
1/8" from case for 5 seconds
-55 to +150
T
L
300
°C
Thermal Characteristics
Symbol
R
θJC
Parameter
Thermal Resistance, Junction-to-Case
640
0.90
640F
2.89
Units
°C/W
R
θCS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
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640
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA
200
--
--
V
∆
BV
DSS
/
∆
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA, Referenced to
25°C
V
DS
= 200 V, V
GS
= 0 V
--
--
--
0.25
--
--
--
1
10
V/°C
µA
µA
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 160 V, T
C
= 125°C
I
GSSF
Gate-Body Leakage Current,
Forward
V
GS
= 30 V, V
DS
= 0 V
--
--
100
nA
I
GSSR
Gate-Body Leakage Current,
Reverse
V
GS
= -30 V, V
DS
= 0 V
--
--
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
2.0
--
4.0
V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 9.0A
--
0.14
0.18
Ω
Dynamic Characteristics
C
iss
Input Capacitance
--
850
--
pF
C
oss
Output Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
190
--
pF
C
rss
Reverse Transfer Capacitance
--
80
--
pF
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640
Switching Characteristics
t
d
(
on)
Turn-On Delay Time
--
20
--
ns
t
r
Turn-On Rise Time
V
DD
= 100 V, I
D
= 18A,
R
G
= 25 Ω
--
150
--
ns
t
d(off)
Turn-Off Delay Time
--
140
--
ns
t
f
Turn-Off Fall Time
(Note 4, 5)
--
120
--
ns
Q
g
Total Gate Charge
V
DS
= 160 V, I
D
= 18A,
V
GS
= 10 V
(Note 4, 5)
--
40
-
nC
Q
gs
Gate-Source Charge
--
6.0
--
nC
Q
gd
Gate-Drain Charge
--
22
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
--
--
18.0
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
Reverse Recovery Time
--
--
72.0
A
V
SD
V
GS
= 0 V,I
S
= 18 A
--
--
1.5
V
t
rr
V
GS
= 0 V,I
S
= 18 A,
d
IF /
dt = 100 A/µs
(Note 4)
--
200
--
ns
Q
rr
Reverse Recovery Charge
--
1.6
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2 mH, IAS = 18 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 18A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
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TEL：0755-86350980 FAX：0755-86350963
640
Typical Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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