GOFORD
Description
The 80N06-251 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge. It
can be used in a wide variety of applications.
80N06-251
General Features
●
V
DSS
60V
R
DS(ON)
@ 10V (typ)
I
D
80
A
Schematic diagram
11.7 m
Ω
●
High density cell design for ultra low Rdson
●
Fully characterized avalanche voltage and current
●
Good stability and uniformity with high E
AS
●
Excellent package for good heat dissipation
●
Special process technology for high ESD capability
●
RoHS Compliant
Application
●
Power switching application
●
LED backlighting
●
Uninterruptible power supply
Ordering Information
Part Number
80N06-251
Marking
80N06
Case
TO-251
Packaging
72pcs/Tube
Absolute Maximum Ratings (T
C
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(T
C
=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Debating factor
Single pulse avalanche energy
(Note 5)
Operating Junction and Storage Temperature Range
E
AS
Symbol
V
DS
V
GS
I
D
I
D
(100℃)
Limit
60
±20
80
56
150
71
0.57
290
-55 To 150
Unit
V
V
A
A
A
W
W/℃
mJ
℃
I
DM
P
D
T
J
,T
STG
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 1
GOFORD
Thermal Characteristic
Thermal Resistance,Junction-to-Case
(Note 2)
R
θJC
1.76
80N06-251
℃
/W
Electrical Characteristics (T
C
=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
Diode Forward Current
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
(Note 3)
(Note 2)
(Note4)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
C
lss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
I
S
t
rr
Qrr
t
on
Condition
V
GS
=0V I
D
=250μA
V
DS
=60V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=30A
V
DS
=5V,I
D
=30A
Min
60
-
-
1
-
30
-
-
-
-
Typ
-
-
-
1.65
11.7
-
2498
185
80
12
5.2
38
27
36
9.9
6.6
-
-
35
47
Max
-
1
±100
2.4
13
-
-
-
-
-
-
-
-
-
-
-
1.4
80
-
-
Unit
V
μA
nA
V
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
nS
nC
V
DS
=25V,V
GS
=0V,
F=1.0MHz
V
DD
=30V,I
D
=2A,R
L
=1Ω
V
GS
=10V,R
GEN
=3Ω
-
-
-
-
-
-
-
-
-
-
V
DS
=30V,I
D
=30A,
V
GS
=10V
V
GS
=0V,I
S
=20A
TJ = 25°C, IF =30A
di/dt = 100A/μs
(Note3)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
5.
E
AS
condition: Tj=25℃,V
DD
=30V,V
G
=10V,L=0.5mH,Rg=25Ω
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 2
GOFORD
Test circuit
1) E
AS
test Circuits
80N06-251
2) Gate charge test Circuit
3) Switch Time Test Circuit
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 3
GOFORD
Typical Electrical and Thermal Characteristics (Curves)
80N06-251
Normalized On-Resistance
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 1 Output Characteristics
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
I
D
- Drain Current (A)
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Rdson On-Resistance(mΩ)
Figure 5 Gate Charge
I
D
- Drain Current (A)
I
s
- Reverse Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 4
GOFORD
80N06-251
C Capacitance (pF)
Vds Drain-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
Figure 8 Safe Operation Area
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 9 Normalized Maximum Transient Thermal Impedance
HTTP://www.gofordsemi.com
TEL：0755-29961262
FAX：0755-29961466
Page 5
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