JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
A94
TRANSISTOR（ PNP
）
TO—92
FEATURES
Power dissipation
P
CM
: 0.625 W
Collector current
I
CM:
-0.2 A
Collector-base voltage
V
(BR)CBO
:
-400 V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
ELECTRICAL
unless
CHARACTERISTICS
（
Tamb=25
℃
specified）
Symbol
V (BR)
CBO
V (BR)
CEO
V (BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE
（
1
）
DC current gain
h
FE
（
2
）
h
FE
（
3
）
V
CE
(sat)
Collector-emitter saturation voltage
V
CE
(sat)
Base-emitter saturation voltage
Transition frequency
V
BE
(sat)
f
T
Test
（Tamb=25℃）
1.EMITTER
2.BASE
3. COLLECTOR
1 2 3
otherwise
Parameter
conditions
MIN
-400
-400
-5
TYP
MAX
UNIT
V
V
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Ic= -100μA， I
E
=0
I
C
= -1 mA，I
B
=0
I
E
=-100μA，I
C
=0
V
CB
=-400 V, I
E
=0
V
CE
=-400 V, I
B
=0
V
EB
= -4 V, I
C
=0
V
CE
=-10V, I
C
=-10 mA
V
CE
=-10V, I
C
=-1mA
V
CE
=-10V, I
C
=-100 mA
I
C
=-10 mA，I
B
=-1mA
I
C
=-50 mA，I
B
=-5mA
I
C
=-10 mA，I
B
= -1 mA
V
CE
=-20V， I
C
=-10mA
f =30MHz
-0.1
-5
-0.1
80
70
60
-0.2
-0.3
-0.75
50
300
μA
μA
μA
V
V
V
MHz
TO-92 PACKAGE OUTLINE DIMENSIONS
D
D1
A
A1
E
b
φ
e
e1
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Ö
Dimensions In Millimeters
Min
3.300
1.100
0.380
0.360
4.400
3.430
4.300
1.270TYP
2.440
14.100
0.000
2.640
14.500
1.600
0.380
4.700
Max
3.700
1.400
0.550
0.510
4.700
Min
L
Dimensions In Inches
Max
0.146
0.055
0.022
0.020
0.185
0.185
0.050TYP
0.096
0.555
0.000
0.104
0.571
0.063
0.015
0.130
0.043
0.015
0.014
0.173
0.135
0.169
C
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