2SA949
TOSHIBA Transistor
Silicon PNP Triple Diffused Type
2SA949
Driver-Stage Audio Amplifier Applications
High-Voltage Switching Applications
Unit: mm
•
•
•
High breakdown voltage: V
CEO
=
−150
V
Low output capacitance: C
ob
= 5.0 pF (max)
High transition frequency: f
T
= 120 MHz (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−150
−150
−5
−50
5
800
150
−55
to 150
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TO-92MOD
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-5J1A
temperature/current/voltage and the significant change in
Weight: 0.36 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
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2006-11-09
2SA949
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
(Note)
V
CE (sat)
V
BE
f
T
C
ob
Test Condition
V
CB
=
−150
V, I
E
= 0
V
EB
=
−5
V, I
C
= 0
V
CE
=
−5
V, I
C
=
−10
mA
I
C
=
−10
mA, I
B
=
−1
mA
V
CE
=
−5
V, I
C
=
−30
mA
V
CE
=
−30
V, I
C
=
−10
mA
V
CB
=
−10
V, I
E
= 0, f = 1 MHz
Min
―
―
70
―
―
―
―
Typ.
―
―
―
―
―
120
4.0
Max
−0.1
−0.1
240
−0.8
−0.9
―
5.0
V
V
MHz
pF
Unit
μA
μA
Note: h
FE
classification O: 70 to 140, Y: 120 to 240
Marking
A949
Part No. (or abbreviation code)
Lot No.
Characteristics
indicator
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2006-11-09
2SA949
I
C
– V
CE
−60
Common emitter
−50
Ta = 25°C
−600
−60
Common emitter
VCE =
−5
V
I
C
– V
BE
(mA)
Collector current I
C
Collector current I
C
−40
−400
(mA)
−40
−500
−50
Ta = 100°C
25
−25
−30
−300
−200
−30
−20
−20
−10
IB =
−100 μA
−10
0
0
−2
−4
−6
−8
−10
−12
0
0
−0.2
−0.4
−0.6
−0.8
−1.0
Collector-emitter voltage
V
CE
(V)
Base-emitter voltage
V
BE
(V)
h
FE
– I
C
1000
Common emitter
500
VCE =
−5
V
300
Ta = 100°C
100
50
30
25
−25
−5
V
CE (sat)
– I
C
(V)
−3
Common emitter
IC/IB = 10
Collector-emitter saturation voltage V
CE (sat)
DC current gain h
FE
−1
−0.5
−0.3
Ta = 100°C
25
−0.1
−0.05
−0.03
−25
10
−0.3 −0.5
−1
−3
−5
−10
−30 −50
−100
Collector current I
C
(mA)
−0.01
−0.3 −0.5
−1
−3
−5
−10
−30 −50
−100
Collector current I
C
(mA)
Safe Operating Area
−300
−100
IC max (pulsed)*
0.5 s*
100 ms*
P
C
– Ta
IC max (continuous)
1.2
(mA)
−50
−30
(W)
DC operation
Ta = 25°C
Collector current I
C
1.0
P
C
Collector power dissipation
VCEO max
−30
−50
−100
−300
0.8
0.6
0.4
0.2
0
0
−10
−5
−3
*: Single nonrepetitive
pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
−1
−3
−5
−10
20
40
60
80
100
120
140
160
Collector-emitter voltage
V
CE
(V)
Ambient temperature Ta (°C)
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2006-11-09
2SA949
RESTRICTIONS ON PRODUCT USE
•
The information contained herein is subject to change without notice.
20070701-EN
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
•
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
•
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
•
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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