a
FEATURES
+1.8 V to +5.5 V Single Supply
2.5 (Typ) On Resistance
Low On-Resistance Flatness
–3 dB Bandwidth >200 MHz
Rail-to-Rail Operation
10-Lead SOIC Package
Fast Switching Times
t
ON
20 ns
t
OFF
13 ns
Typical Power Consumption (<0.01
TTL/CMOS Compatible
APPLICATIONS
Battery Powered Systems
Communication Systems
Sample-and-Hold Systems
Audio Signal Routing
Data Acquisition System
Video Switching
Low Voltage 4
CMOS
,
4-Channel Multiplexer
ADG704
FUNCTIONAL BLOCK DIAGRAM
ADG704
S1
S2
D
S3
S4
W)
1 OF 4
DECODER
A0
A1
EN
GENERAL DESCRIPTION
PRODUCT HIGHLIGHTS
The ADG704 is a CMOS analog multiplexer, comprising four
single channels. This multiplexer is designed on an advanced
submicron process that provides low power dissipation yet gives
high switching speed, low on resistance, low leakage currents
and high bandwidths.
The on resistance profile is very flat over the full analog signal
range. This ensures excellent linearity and low distortion when
switching audio signals. Fast switching speed also makes the
part suitable for video signal switching.
The ADG704 can operate from a single supply range of +1.8 V
to +5.5 V, making it ideal for use in battery powered instru-
ments and with the new generation of DACs and ADCs from
Analog Devices.
The ADG704 switches one of four inputs to a common output,
D, as determined by the 3-bit binary address lines, A0, A1 and
EN. A Logic “0” on the EN pin disables the device.
Each switch of the ADG704 conducts equally well in both
directions when ON. The ADG704 exhibits break-before-make
switching action.
The ADG704 is available in 10-lead
µSOIC
package.
1. +1.8 V to +5.5 V Single Supply Operation.
The ADG704 offers high performance and is fully specified
and guaranteed with +3 V and +5 V supply rails.
2. Very Low R
ON
(4.5
Ω
Max at 5 V, 8
Ω
Max at 3 V).
At supply voltage of +1.8 V, R
ON
is typically 35
Ω
over the
temperature range.
3. Low On-Resistance Flatness.
4. –3 dB Bandwidth Greater than 200 MHz.
5. Low Power Dissipation.
CMOS construction ensures low power dissipation.
6. Fast t
ON
/t
OFF
.
7. Break-Before-Make Switching Action.
8. 10-Lead
µSOIC
Package.
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
World Wide Web Site: http://www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 1999
ADG704–SPECIFICATIONS
Parameter
ANALOG SWITCH
Analog Signal Range
On-Resistance (R
ON
)
On-Resistance Match Between
Channels (∆R
ON
)
On-Resistance Flatness (R
FLAT(ON)
)
LEAKAGE CURRENTS
Source OFF Leakage I
S
(OFF)
Drain OFF Leakage I
D
(OFF)
Channel ON Leakage I
D
, I
S
(ON)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
DYNAMIC CHARACTERISTICS
2
t
ON
t
OFF
Break-Before-Make Time Delay, t
D
Charge Injection
Off Isolation
0.75
1
(V
DD
= +5 V
10%, GND = 0 V. All Specifications –40 C to +85 C, unless
otherwise noted.)
B Version
–40 C to
+25 C
+85 C
0 V to V
DD
2.5
4
4.5
0.1
0.4
1.2
±
0.01
±
0.1
±
0.01
±
0.1
±
0.01
±
0.1
Units
V
Ω
typ
Ω
max
Ω
typ
Ω
max
Ω
typ
Ω
max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
µA
typ
µA
max
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
dB typ
dB typ
MHz typ
pF typ
pF typ
pF typ
Test Conditions/Comments
V
S
= 0 V to V
DD
, I
DS
= –10 mA;
Test Circuit 1
V
S
= 0 V to V
DD
, I
DS
= –10 mA
V
S
= 0 V to V
DD
, I
DS
= –10 mA
V
DD
= +5.5 V
V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V;
Test Circuit 2
V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V;
Test Circuit 2
V
S
= V
D
= 4.5 V or 1 V;
Test Circuit 3
±
0.3
±
0.3
±
0.3
2.4
0.8
0.005
±
0.1
V
IN
= V
INL
or V
INH
14
20
6
13
8
1
3
–60
–80
–62
–82
200
9
37
54
Channel-to-Channel Crosstalk
Bandwidth –3 dB
C
S
(OFF)
C
D
(OFF)
C
D
, C
S
(ON)
POWER REQUIREMENTS
I
DD
R
L
= 300
Ω,
C
L
= 35 pF
V
S
= 3 V, Test Circuit 4
R
L
= 300
Ω,
C
L
= 35 pF
V
S
= 3 V, Test Circuit 4
R
L
= 300
Ω,
C
L
= 35 pF
V
S1
= V
S2
= 3 V, Test Circuit 5
V
S
= 2 V, R
S
= 0
Ω,
C
L
= 1 nF;
Test Circuit 6
R
L
= 50
Ω,
C
L
= 5 pF, f = 10 MHz
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz;
Test Circuit 7
R
L
= 50
Ω,
C
L
= 5 pF, f = 10 MHz
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz;
Test Circuit 8
R
L
= 50
Ω,
C
L
= 5 pF; Test Circuit 9
0.001
1.0
µA
typ
µA
max
V
DD
= +5.5 V
Digital Inputs = 0 V or 5 V
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–2–
REV. A
ADG704
SPECIFICATIONS
Parameter
ANALOG SWITCH
Analog Signal Range
On-Resistance (R
ON
)
1
(V
DD
= +3 V
10%, GND = 0 V. All Specifications –40 C to +85 C, unless otherwise noted.)
B Version
–40 C to
+25 C
+85 C
0 V to V
DD
5
8
Units
V
Ω
typ
Ω
max
Ω
typ
Ω
max
Ω
typ
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
µA
typ
µA
max
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
dB typ
dB typ
MHz typ
pF typ
pF typ
pF typ
Test Conditions/Comments
4.5
V
S
= 0 V to V
DD
, I
DS
= –10 mA;
Test Circuit 1
V
S
= 0 V to V
DD
, I
DS
= –10 mA
V
S
= 0 V to V
DD
, I
DS
= –10 mA
V
DD
= +3.3 V
V
S
= 3 V/1 V, V
D
= 1 V/3 V;
Test Circuit 2
V
S
= 3 V/1 V, V
D
= 1 V/3 V;
Test Circuit 2
V
S
= V
D
= 3 V or 1 V;
Test Circuit 3
On-Resistance Match Between
Channels (∆R
ON
)
On-Resistance Flatness (R
FLAT(ON)
)
LEAKAGE CURRENTS
Source OFF Leakage I
S
(OFF)
Drain OFF Leakage I
D
(OFF)
Channel ON Leakage I
D
, I
S
(ON)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current
I
INL
or I
INH
DYNAMIC CHARACTERISTICS
2
t
ON
t
OFF
Break-Before-Make Time Delay, t
D
Charge Injection
Off Isolation
0.1
0.4
2.5
±
0.01
±
0.1
±
0.01
±
0.1
±
0.01
±
0.1
±
0.3
±
0.3
±
0.3
2.0
0.4
0.005
±
0.1
V
IN
= V
INL
or V
INH
16
24
8
16
9
1
3
–60
–80
–62
–82
200
9
37
54
Channel-to-Channel Crosstalk
Bandwidth –3 dB
C
S
(OFF)
C
D
(OFF)
C
D
, C
S
(ON)
POWER REQUIREMENTS
I
DD
R
L
= 300
Ω,
C
L
= 35 pF
V
S
= 2 V, Test Circuit 4
R
L
= 300
Ω,
C
L
= 35 pF
V
S
= 2 V, Test Circuit 4
R
L
= 300
Ω,
C
L
= 35 pF
V
S1
= V
S2
= 2 V, Test Circuit 5
V
S
= 1.5 V, R
S
= 0
Ω,
C
L
= 1 nF;
Test Circuit 6
R
L
= 50
Ω,
C
L
= 5 pF, f = 10 MHz
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz;
Test Circuit 7
R
L
= 50
Ω,
C
L
= 5 pF, f = 10 MHz
R
L
= 50
Ω,
C
L
= 5 pF, f = 1 MHz;
Test Circuit 8
R
L
= 50
Ω,
C
L
= 5 pF; Test Circuit 9
0.001
1.0
µA
typ
µA
max
V
DD
= +3.3 V
Digital Inputs = 0 V or 3 V
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
REV. A
–3–
ADG704
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= +25°C unless otherwise noted)
TERMINOLOGY
V
DD
to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V
Analog, Digital Inputs
2
. . . . . . . . . . . –0.3 V to V
DD
+0.3 V or
30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
(Pulsed at 1 ms, 10% Duty Cycle Max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
µSOIC
Package, Power Dissipation . . . . . . . . . . . . . . . 315 mW
θ
JA
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 206°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 kV
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2
Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
V
DD
GND
S
D
A0, A1
EN
R
ON
∆R
ON
R
FLAT(ON)
I
D
(OFF)
I
S
(OFF)
I
D
, I
S
(ON)
V
D
(V
S
)
C
S
(OFF)
C
D
(OFF)
C
D
, C
S
(ON)
t
ON
t
OFF
ORDERING GUIDE
t
D
1
Model
ADG704BRM
Temperature
Range
–40°C to +85°C
Brand
S9B
Package
Option
2
RM-10
Crosstalk
NOTES
1
Brand = Due to small package size, these three characters represent the part
number.
2
RM =
µSOIC.
Off Isolation
Charge
Injection
Bandwidth
On Response
On Loss
PIN CONFIGURATION
(10-Lead SOIC)
A0
1
S1
2
GND
3
10
A1
ADG704
9
S2
TOP VIEW
8
D
(Not to Scale)
7
S4
S3
4
6
Most positive power supply potential.
Ground (0 V) reference.
Source terminal. May be an input or output.
Drain terminal. May be an input or output.
Logic control inputs.
Logic control input.
Ohmic resistance between D and S.
On resistance match between any two chan-
nels i.e., R
ON
max–R
ON
min.
Flatness is defined as the difference between
the maximum and minimum value of on resis-
tance as measured over the specified analog
signal range.
Drain leakage current with the switch “OFF.”
Source leakage current with the switch “OFF.”
Channel leakage current with the switch “ON.”
Analog voltage on terminals D, S.
“OFF” switch source capacitance.
“OFF” switch drain capacitance.
“ON” switch capacitance.
Delay between applying the digital control
input and the output switching on. See Test
Circuit 4.
Delay between applying the digital control
input and the output switching off.
“OFF” time or “ON” time measured between
the 90% points of both switches, when switching
from one address state to another. See Test
Circuit 5.
A measure of unwanted signal that is coupled
through from one channel to another as a
result of parasitic capacitance.
A measure of unwanted signal coupling
through an “OFF” switch.
A measure of the glitch impulse transferred
from the digital input to the analog output
during switching.
The frequency at which the output is attenu-
ated by –3 dBs.
The frequency response of the “ON” switch.
The voltage drop across the “ON” switch,
seen on the On Response vs. Frequency plot
as how many dBs the signal is away from 0 dB
at very low frequencies.
Table I. Truth Table
EN
5
V
DD
A1
X
0
0
1
1
A0
X
0
1
0
1
EN
0
1
1
1
1
ON Switch
NONE
1
2
3
4
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG704 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
–4–
REV. A
Typical Performance Characteristics–ADG704
6.0
5.5
5.0
4.5
4.0
3.5
R
ON
–
10m
T
A
= +25 C
1m
V
DD
= +5V
V
DD
= +2.7V
I
SUPPLY
– A
A0 TOGGLED
100
10
1
3.0
2.5
2.0
1.5
1.0
0.5
0
0
V
DD
= +3.0V
V
DD
= +4.5V
EN TOGGLED
V
DD
= +5.0V
100n
10n
1n
100
0.5
1.0
1.5
2.0 2.5
3.0 3.5
4.0
4.5
V
D
OR V
S
– DRAIN OR SOURCE VOLTAGE – Volts
5.0
1k
10k
100k
FREQUENCY – Hz
1M
10M
Figure 1. On Resistance as a Function of V
D
(V
S
) Single
Supplies
6.0
5.5
5.0
4.5
4.0
3.5
+25 C
V
DD
= +3.0V
Figure 4. Supply Current vs. Input Switching Frequency
–30
V
DD
= +5V, +3V
–40
–50
OFF ISOLATION – dB
3.0
+85 C
–60
–70
–80
–90
–100
–110
R
ON
–
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.5
1.0
1.5
2.0
2.5
V
D
OR V
S
– DRAIN OR SOURCE VOLTAGE – Volts
–40 C
–120
–130
10k
100k
1M
10M
FREQUENCY – Hz
100M
Figure 2. On Resistance as a Function of V
D
(V
S
) for
Different Temperatures; V
DD
= 3 V
Figure 5. Off Isolation vs. Frequency
6.0
5.5
5.0
4.5
4.0
3.5
R
ON
–
CROSSTALK – dB
–30
V
DD
= +5.0V
V
DD
= +5V, +3V
–40
–50
–60
–70
–80
–90
–100
–110
–120
–130
10k
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.5
1.0
1.5
2.0 2.5
3.0 3.5
4.0
4.5
V
D
OR V
S
– DRAIN OR SOURCE VOLTAGE – Volts
5.0
–40 C
+85 C
+25 C
100k
1M
10M
FREQUENCY – Hz
100M
Figure 3. On Resistance as a Function of V
D
(V
S
) for
Different Temperatures; V
DD
= 5 V
Figure 6. Crosstalk vs. Frequency
REV. A
–5–
模拟电子
