AL5802
30V, ADJUSTABLE CURRENT SINK LINEAR LED DRIVER
ADVANCE INFORMATION
NEW PRODUCT
Description
The AL5802 combines a high gain NPN transistor with a pre-biased
NPN transistor to make a simple small footprint LED driver.
The LED current is set by an external resistor connected from REXT
pin (6) to GND pin (4), the internal high gain transistor develops
approximately 0.6V across the external resistor.
The AL5802 open-collector output can operate from 0.8V to 30V
enabling it to operate from 5V to 24V power supplies without
additional components.
Pin Assignments
(Top View)
6
5
4
Q1
Q2
PWM dimming of the LED current can be achieved by either driving
the BIAS pin (2) with a low impedance voltage source, or driving the
EN pin (3) with an external open-collector NPN transistor or open-
drain N-channel MOSFET.
The AL5802 is available in a SOT26 package and is ideal for driving
20mA to 120mA LED currents.
1
2
3
SOT26
Features
Reference voltage VRSET = 0.65V
-40 to +125°C temperature range
0.8V to 30V open-collector output
Negative temperature co-efficient – automatically reduces the
LED current at high temperatures
Low thermal impedance SOT26 with copper leadframe
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
Linear LED driver
LED signs
Offline LED luminaries
Typical Application Circuit
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
AL5802
Document number: DS35516 Rev. 9 - 2
1 of 11
www.diodes.com
March 2014
© Diodes Incorporated
AL5802
Pin Descriptions
ADVANCE INFORMATION
NEW PRODUCT
Pin Number
1
2
3
4
5
6
Name
OUT
BIAS
EN
GND
FB
REXT
Function
Open-collector LED driver output
Biases the open collector output transistor
Enable pin for PWM dimming. Provides access to the base of Q2 and collector of Q1
Ground reference point for setting LED current
Feedback pin.
Should be connected to pin 6.
Current sense pin. LED current sensing resistor should be connected from here to GND.
Functional Block Diagram
Fig. 1 Block Diagram
Absolute Maximum Ratings
Symbol
V
OUT
V
BIAS
V
FB
V
EN
V
REXT
I
OUT
T
J
T
ST
Characteristics
Output voltage relative to GND
BIAS voltage relative to GND (Note 4)
LED voltage relative to GND
EN voltage relative to GND
REXT voltage relative to GND
Output current
Operating junction temperature
Storage temperature
Values
30
30
6
6
6
150
-40 to +150
-55 to +150
Unit
V
V
V
V
V
mA
°C
°C
These are stress ratings only. Operation outside the absolute maximum ratings may cause device failure.
Operation at the absolute maximum rating for extended periods may reduce device reliability.
Note:
4. With pins 5 and 6 connected together.
AL5802
Document number: DS35516 Rev. 9 - 2
2 of 11
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March 2014
© Diodes Incorporated
AL5802
Package Thermal Data
ADVANCE INFORMATION
NEW PRODUCT
Characteristic
Power Dissipation (Note 5) @ T
A
= +25°C
Power Dissipation (Note 6) @ T
A
= +25°C
Power Dissipation (Note 7) @ T
A
= +25°C
Thermal Resistance, Junction to Ambient Air (Note 5) @ T
A
= +25°C
Thermal Resistance, Junction to Ambient Air (Note 6) @ T
A
= +25°C
Thermal Resistance, Junction to Ambient Air (Note 7) @ T
A
= +25°C
Notes:
5. Device mounted on FR-4 PCB, 2oz with minimum recommended pad layout.
6. Device mounted on 25mm x 25mm 2oz copper board.
7. Device mounted on 50mm x 50mm 2oz copper board.
Symbol
P
D
Value
0.37
0.87
1
335
143
120
Unit
W
R
θJA
°C/W
Recommended Operating Conditions
Symbol
V
BIAS
V
OUT
I
LED
T
A
Note:
Parameter
Supply voltage range
OUT voltage range
LED pin current (Note 8)
Operating ambient temperature range
Min
4.5
0.8
10
-40
Max
30
30
120
+125
Unit
V
mA
°C
8. Subject to ambient temperature, power dissipation and PCB.
Electrical Characteristics – NPN Transistor – Q1
(@T
A
= +25°C, unless otherwise specified.)
Symbol
V
(BR)CEO
V
(BR)EBO
I
CEX
I
BL
h
FE
V
CE(SAT)
V
BE(SAT)
Characteristic
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage
Test Condition
I
C
= 1.0mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 30V, V
EB(OFF)
= 3.0V
V
CE
= 30V, V
EB(OFF)
= 3.0V
I
C
= 100µA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 10mA, I
B
= 1.0mA
Min
40
6.0
—
—
40
70
100
—
0.65
Typ
—
—
—
—
—
—
—
—
—
Max
—
—
50
50
—
—
300
0.20
0.85
Unit
V
V
nA
nA
—
V
V
Electrical Characteristics – NPN Pre-biased Transistor – Q2
(@T
A
= +25°C, unless otherwise specified.)
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
R
1
Note:
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage (Note 9)
DC Current Gain (Note 9)
Input Resistance
Test Condition
I
C
= 50μA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 50μA, I
C
= 0
V
CB
= 30V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 10mA, I
B
= 1mA
V
CE
= 5V, I
C
= 150mA
—
Min
30
30
5.0
—
—
—
100
7
Typ
—
—
—
—
—
—
—
10
Max
—
—
—
0.5
0.5
0.3
—
13
Unit
V
V
V
µA
µA
V
—
kΩ
*Characteristics of transistor only.
9. Short duration pulse test used to minimize self-heating effect.
AL5802
Document number: DS35516 Rev. 9 - 2
3 of 11
www.diodes.com
March 2014
© Diodes Incorporated
AL5802
Thermal Characteristics
ADVANCE INFORMATION
NEW PRODUCT
AMBIENT TEMPERAURE (°C)
Fig. 2 Derating Curve
Fig. 3 Max Power vs. Area
Fig. 4 Thermal Resistance vs. Area
AL5802
Document number: DS35516 Rev. 9 - 2
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March 2014
© Diodes Incorporated
AL5802
Typical Performance Characteristics
ADVANCE INFORMATION
NEW PRODUCT
Fig. 5 Output Current vs. V
out
Fig. 6 Output Current vs. R
EXT
Fig. 7 Output Current vs. V
out
Fig. 8 Output Current vs. V
out
Fig. 9 Output Current vs. V
out
Fig. 10 Output Current vs. V
bias
Note:
10. V
out
in the “Output current Vs V
out
” graphs limited by power dissipation in the device.
AL5802
Document number: DS35516 Rev. 9 - 2
5 of 11
www.diodes.com
March 2014
© Diodes Incorporated
