Analog Microelectronics, Inc.
AME385-2.5
Micropower Voltage Reference Diode
n
General Description
The AME385-2.5 is a micropower 2-terminal band-gap
voltage regulator diode. It operates over a 20µA to 20mA
current range. Each circuit is trimmed at wafer sort to
provide a
±0.20%
and
±0.50%
initial tolerance. The de-
sign of the AME385-2.5 allows for a large range of load
capacitances and operating currents. The low start-up
current makes these part ideal for battery applications.
Analog Microelectronics offers this part in a TO-92 and
SO-8 package as well as the space saving SOT-23.
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Key Features
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Small packages: SOT-23, TO-92, SO-8
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Tolerates capacitive loads
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Fixed reverse breakdown voltage of 2.5V
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Tight voltage tolerance ----------
±0.20%, ±0.50%
l
Wide operating current ---------- 20µA to 20mA
l
Wide temperature range -------- -40
o
C to +85
o
C
l
Low temperature coefficient --- 100ppm/
o
C (max)
l
Excellent transient response
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Applications
l
l
l
l
l
l
Portable electronics
Power supplies
Computer peripherals
Data acquisition systems
Battery chargers
Consumer electronics
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Functional Block Diagram
VR
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Typical Application
VS
RS
VR
B andgap
Cell
Current
S hunt
1000pF
V alue optional
I
V R = 2.5V
GND
RS =
VS - VR
I
1
Analog Microelectronics, Inc.
AME385-2.5
Micropower Voltage Reference Diode
n
Package Outline
SOT-23 Top View
NC *
TO-92-3 Bottom View
TO-92-2 Bottom View
NC *
+
-
+
-
+
-
SO-8 Top View
NC
NC
NC
-
1
2
3
4
8
7
6
5
+
NC
NC
NC
* The NC pin must float or be connected to - (negative)
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Ordering Information
P art N u m b er
A M E 385D E E T
Accu rac y
0.2%
M arkin g
A C S ww
AME
385 D E HA
yyww
A B Yww
AME
385
BEAT
yyww
AME
385
BEAS
yyww
AME
385 B E HA
yyww
P acka g e
S OT-23
Op e ratin g T em p . R a n g e
-40 C to +8 5 C
O
O
A M E 385D E HA
0.2%
S O-8
-40 C to +8 5 C
O
O
O
O
A M E 385B E E T
0.5%
S OT-23
-40 C to +8 5 C
A M E 385B E A T
0.5%
TO-9 2-3
-40 C to +8 5 C
O
O
A M E 385B E A S
0.5%
TO-9 2-2
-40 C to +8 5 C
O
O
A M E 385B E HA
0.5%
S O-8
-40 C to +8 5 C
O
O
P leas e c ons ult AME s ales offic e or authoriz ed R ep./D is tributor for other voltage ac c urac y and
pac kage type availability.
2
Analog Microelectronics, Inc.
AME385-2.5
Micropower Voltage Reference Diode
n
Absolute Maximum Ratings
P a ra m e te r
S upply Current
M a x im um
50
Unit
mA
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Recommended Operating Conditions
P a ra m e te r
S upply Current
A m bient Tem perature Range
Junction Tem perature
Ra ting
100
µ
A ~ 20m A
-40 to + 85
-40 to + 125
o
Unit
C
C
o
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Thermal Information
P a ra m e te r
S O T-23
Therm al R es is tanc e
TO -92
S O -8
M ax im um Junc tion Tem perature
M ax im um Lead Tem perature ( 10 S ec )
M a x im u m
325
180
125
150
300
o
o
U n it
C / W
C
C
o
Caution: Stress above the listed absolute rating may cause permanent damage to the device
3
Analog Microelectronics, Inc.
AME385-2.5
Micropower Voltage Reference Diode
n
Electrical Specifications
Unless otherwise specified, TA = 0~70
o
C, I = 100
µ
A
PARAMETER
Reference Voltage,
±
0.2%
V
REF
Reference Voltage,
±
0.5%
Minimum Current
Reference Voltage Change With
Current
Maximum Operation Current
Reverse Dynamic Impedence
Wideband Noise (rms)
Long term Stability
Reference Voltage Temp. Coeff.
V
REFTC
I
MIN
I
MIN
< I < 1mA
dV
REF/I
1mA < I < 20mA
ILmax
RDI
Vn
IR= 100mA, f=20Hz
IR= 100mA, 10 Hz<f<10KHz
IR= 100mA, TA=25
o
C,
T=1000 Hours
0
o
C < T
A
< 70
o
C
20
1.5
60
20
100
5
20
mA
Ohm
µ
V
ppm
ppm/
o
C
1.5
SYMBOL
TEST CONDITIONS
I
REF
= 100
µ
A
MIN
2.495
2.487
TYP
2.50
2.50
MAX
2.505
2.513
20
3
UNITS
V
V
µ
A
mV
4
Analog Microelectronics, Inc.
AME385-2.5
Normalized Percentage Change vs.
Temperature
4
Micropower Voltage Reference Diode
Output Voltage Change vs. Current
0.1
0
% Change of V
OUT
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-50
-2
I = 100µA
(mV)
2
0
0
50
100
150
0 .0
1
(m A )
100
(
O
C)
Reverse Characteristic
100µA
1.0V
Forward Characteristic
10µA
I
R
1µA
85
o
C
25
o
C
0.125V/DIV
25
o
C
85
o
C
100nA
0.0V
0.65V
1.3V
0.0V
1µA
100µA
10mA
V
R
Transient Response
2 5
o
C
5V/DIV
V
IN
VR
1V/DIV
200µS/DIV
5
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