AO3402
SOT-23 Plastic-Encapsulate
MOSFETS
30V
N-Channel
MOSFET
V
(BR)DSS
30V
R
DS(on)
MAX
28
mΩ@10V
34
mΩ@4.5V
I
D
5A
SOT-23
3
1. GATE
2. SOURCE
3. DRAIN
1
Features
Lead free product is acquired
Surface mount package
MARKING
D
2
Equivalent circuit
A29T
G
S
PACKAGE SPECIFICATIONS
Package Reel Size
Reel DIA.
(mm)
Q'TY/Reel
(pcs)
Box Size
(mm)
QTY/Box
(pcs)
Carton Size Q'TY/Carton
(mm)
(pcs)
SOT-23
7'
178
3000
203×203×195
45000
438×438×220
180000
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
2)
Symbol
Limit
Unit
V
DS
V
GS
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
30
±16
5.0
4
1.5
0.9
20.4
-50 to 150
80
o
V
A
W
I
D
P
D
I
DM
T
J
, T
stg
Maximum Power Dissipation
Pulsed Drain Current
1)
A
o
Operating Junction and Storage Temperature Range
Thermal Resistance Junction-Ambient
Notes
1)
Pulse width limited by maximum junction temperature.
2)
Surface Mounted on FR4 Board, t
v
5 sec.
C
R
θJA
C/W
The above data are for reference only.
DN:T19C31A0
http://www.microdiode.com
Rev:2019A0
Page :1
AO3402
MOSFET ELECTRICAL CHARACTERISTICS
T
a
=25
℃
unless otherwise specified
Parameter
Static
Drain-Source Breakdown Voltage
BV
DSS
1)
Symbol
Test Condition
Min.
Typ.
Miax.
Unit
V
GS
= 0V, I
D
= 250uA
V
GS
= 10V, I
D
= 4.0A
30
28
34
55
0.5
0.8
36
50
80
1.2
1
100
8
V
Drain-Source On-State Resistance
R
DS(on)
V
GS
=
4.5V,
I
D
= 3.0A
V
GS
= 2.5V, I
D
= 1.0A
mΩ
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source drain current(Body Diode)
Diode Forward Voltage
1)
1)
V
GS(th)
I
DSS
I
GSS
g
fs
V
DS
=V
GS
, I
D
= 250uA
V
DS
=30V, V
GS
=0V
V
GS
=±16V
,
V
DS
=0V
V
DS
=15V
,
I
D
= 4A
V
uA
nA
S
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
V
DS
= 15V, I
D
= 4A
V
GS
= 4.5V
3.1
0.4
1.3
4.4
nC
V
DD
= 15V, R
G
=3.3
Ω
I
D
=1A,V
GS
=
10V
2.6
25.5
3.3
ns
V
DS
= 15V, V
GS
= 0V
f = 1.0 MHz
240
35
30
1.8
A
V
pF
I
SD
V
SD
I
S
=
4.0A,
V
GS
= 0V
0.85
1.2
Pulse test
:
Pulse width≤300µs, duty cycle≤2%.
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Rev:2019A0
Page :2
AO3402
Typical Characteristics
VGS(TH), Gate -Source Voltage (V)
V
DS
, Drain -Source Voltage (V)
Fig1.
Typical Output Characteristics
I
D
, Drain-Source Current (A)
Tj - Junction Temperature (°
C)
Fig2.
Normalized Threshold Voltage Vs. Temperature
ID, Drain-Source Current (A)
V
GS
, Gate -Source Voltage (V)
Fig3.
Typical Transfer Characteristics
Rdson, On -Resistance (mΩ))
ID , Drain Current (A)
Fig4.
On-Resistance vs. Drain Current and Gate
ISD, Reverse Drain Current (A)
V
SD
, Source-Drain Voltage (V)
Fig5.
Typical Source-Drain Diode Forward Voltage
http://www.microdiode.com
-ID - Drain Current (A)
V
DS
, Drain -Source Voltage (V)
Fig6.
Maximum Safe Operating Area
Rev:2019A0
Page :3
AO3402
Typical Characteristics
V
DS
, Drain-Source Voltage (V)
Fig7.
Typical Capacitance Vs. Drain-Source Voltage
VGS, Gate-Source Voltage (V)
C, Capacitance (pF)
Qg, Total Gate Charge (nC)
Fig8.
Typical Gate Charge Vs. Gate-Source Voltage
ZqJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Fig9.
Normalized Maximum Transient Thermal Impedance
Fig10.
Switching Time Test Circuit and waveforms
The curve above is for reference only.
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Rev:2019A0
Page :4
AO3402
Outlitne Drawing
SOT-23 Package Outline Dimensions
θ
Symbol
A
A1
b
c
D
E
E1
e
L
L1
θ
e
Suggested Pad Layout
0.037
0.95
0.037
0.95
Dimensions In Millimeters
Min
Typ
Max
1.00
1.40
0.10
0.35
0.50
0.10
0.20
2.70
2.90
3.10
1.40
1.60
2.4
2.80
1.90
0.10
0.30
0.4
0°
10°
E1
E
L1
1
L
Note:
1.Controlling dimension:in/millimeters.
2.General tolerance: ±0.05mm.
3.The pad layout is for reference purposes only.
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Important Notice and Disclaimer
Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its
products and specifications at any time without notice. Customers should obtain and confirm the
latest product information and specifications before final design,purchase or use.
Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, not does Microdiode Electronics
(Jiangsu) assume any liability for application assistance or customer product design. Microdiode
Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased
or used for any unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property rights of
Microdiode Electronics (Jiangsu).
Microdiode Electronics (Jiangsu) products are not authorized for use as critical components
in life support devices or systems without express written approval of Microdiode Electronics
(Jiangsu).
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Rev:2019A0
Page :5
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