UMW
R
UMW AO3414A
SOT - 23 Plastic-Encapsulate MOSFETS
SOT–23
UMW AO3414A
N-Channel 20-V(D-S) MOSFET
V
(BR)DSS
20
V
R
DS(on)
MAX
35
mΩ
@
4.5V
60
mΩ
@
2.5V
I
D
4.
2
A
1. GATE
2. SOURCE
3. DRAIN
FEATURE
TrenchFET Power MOSFET
APPLICATION
Load Switch for Portable Devices
DC/DC Converter
MARKING
Equivalent Circuit
AE9T
Maximum ratings (T
a
=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source-Drain Current(Diode Conduction)
Power Dissipation
Thermal Resistance from Junction to Ambient
(t≤5s)
Operating Junction
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
S
P
D
R
θJA
T
J
T
STG
Value
20
±12
4.2
0.6
0.4
312.5
150
-55 ~+150
Unit
V
A
W
℃/W
℃
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UMW
R
UMW AO3414A
T
a
=25
℃
unless otherwise specified
Parameter
Static
Drain-source breakdown voltage
Gate-threshold voltage
Gate-body leakage
Zero gate voltage drain current
Drain-source on-resistance
Forward transconductance
Diode forward voltage
Dynamic
Total gate charge
Gate-source charge
Gate-drain charge
Input capacitance
b
Output capacitance
b
Reverse transfer capacitance
b
Switching
b
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Notes :
a.
b.
Pulse Test : Pulse width≤300µs, duty cycle
≤2%.
These parameters have no way to verify.
t
d(on)
t
r
t
d(off)
t
f
V
DD
=10V,
R
L
=5.5Ω,
I
D
≈3.6A,
V
GEN
=4.5V,Rg=6Ω
7
55
16
10
15
80
60
25
ns
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
V
DS
=10V,V
GS
=0V,f=1MHz
V
DS
=10V,V
GS
=4.5V,I
D
=3.6A
4.0
0.65
1.5
300
120
80
pF
10
nC
a
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
r
DS(on)
g
fs
V
SD
Test Condition
V
GS
= 0V, I
D
=10µA
V
DS
=V
GS
, I
D
=50µA
V
DS
=0V, V
GS
=±8V
V
DS
=20V, V
GS
=0V
V
GS
=4.5V, I
D
=3.6A
V
GS
=2.5V, I
D
=3.1A
V
DS
=5V, I
D
=3.6A
I
S
=0.94A,V
GS
=0V
Min
20
0.65
Typ
Max
Units
0.95
1.2
±100
1
V
nA
µA
Ω
S
0.028
0.035
8
0.76
0.035
0.060
a
1.2
V
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友台半导½有限公司
UMW
15
R
UMW AO3414A
Output Characteristics
Transfer Characteristics
T
a
=25
℃
Pulsed
8
V
GS
=3.5V,3.0V,2.5V
V
GS
=2.0V
T
a
=25
℃
Pulsed
10
12
(A)
I
D
DRAIN CURRENT
9
6
6
4
DRAIN CURRENT
I
D
V
GS
=1.5V
3
(A)
2
0
0
0.0
0
2
4
6
8
10
0.5
1.0
1.5
2.0
2.5
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
100
R
DS(ON)
——
I
D
T
a
=25
℃
Pulsed
R
DS(ON)
——
0.20
V
GS
T
a
=25
℃
Pulsed
80
0.16
(m
Ω
)
R
DS(ON)
60
R
DS(ON)
V
GS
=2.5V
ON-RESISTANCE
V
GS
=4.5V
(
Ω
)
0.12
40
0.08
ON-RESISTANCE
20
0.04
I
D
=4.5A
0
0
5
10
15
20
25
30
0.00
0
2
4
6
8
10
DRAIN CURRENT
I
D
(A)
GATE TO SOURCE VOLTAGE
V
GS
(V)
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