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AO3415

漏源电压(Vdss):25V 连续漏极电流(Id)(25°C 时):4.2A 栅源极阈值电压:1.3V @ 250uA 漏源导通电阻:130mΩ @ 4.2A,10V 最大功率耗散(Ta=25°C):- 类型:P沟道

器件类别:分立半导体    MOS(场效应管)   

厂商名称:时科(SHIKUES)

厂商官网:http://www.shike.tw

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器件参数
参数名称
属性值
漏源电压(Vdss)
25V
连续漏极电流(Id)(25°C 时)
4.2A
栅源极阈值电压
1.3V @ 250uA
漏源导通电阻
130mΩ @ 4.2A,10V
类型
P沟道
文档预览
A03415
P-Channel Enhancement Mode MOSFET
-25V/-4.2A,
R
DS(ON)
=130mΩ(MAX) @V
GS
= -10V.
R
DS(ON)
= 150mΩ(MAX) @V
GS
= -4.5V.
R
DS(ON)
=180mΩ(MAX) @V
GS
= -2.5V.
Super
High dense cell design for extremely low R
DS(ON)
and Rugged
Reliable
SC-59
for Surface Mount Package
Applications
Power
Management
1:Gate 2:Source 3:Drain
Portable Equipment and Battery Powered Systems.
Absolute Maximum Ratings
T
A
=25℃ Unless Otherwise noted
Electrical Characteristics
T
A
=25℃ Unless Otherwise noted
REV.08
1 of 3
A03415
Typical Characteristics
REV.08
2
of 3
A03415
Package Outline Dimensions (UNIT: mm) SC-59
REV.08
3
of 3
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