AO3423
20V P-Channel MOSFET
General Description
The AO3423 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as
a load switch applications.
Product Summary
V
DS
I
D
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
= -10V)
R
DS(ON)
(at V
GS
= -4.5V)
R
DS(ON)
(at V
GS
= -2.5V)
Typical ESD protection
-20V
-2A
< 92mΩ
< 118mΩ
< 166mΩ
HBM Class 2
SOT23
Top View
Bottom View
D
D
D
G
S
G
S
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
B
C
Maximum
-20
±12
-2
-2
-17
1.4
0.9
-55 to 150
Units
V
V
A
V
GS
C
T
A
=25°
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
65
85
43
Max
90
125
60
Units
°
C/W
°
C/W
°
C/W
Rev 5: Nov 2011
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Page 1 of 5
AO3423
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-20V, V
GS
=0V
C
T
J
=55°
V
DS
=0V, V
GS
= ±12V
V
DS
=V
GS
, I
D
=-250µΑ
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-10V, I
D
=-2A
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°
C
V
GS
=-4.5V, I
D
=-2A
V
GS
=-2.5V, I
D
=-1A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
V
DS
=-5V, I
D
=-2A
I
S
=-1A,V
GS
=0V
-0.5
-17
76
99
94
128
6.8
-0.76
-1
-1.5
250
V
GS
=0V, V
DS
=-10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
40
22
325
63
37
11.2
3.2
V
GS
=-4.5V, V
DS
=-10V, I
D
=-2A
0.6
0.9
11
V
GS
=-10V, V
DS
=-10V, R
L
=5Ω,
R
GEN
=3Ω
I
F
=-2A, dI/dt=100A/µs
5.5
22
8
6.1
1.4
400
85
52
17
4.5
92
119
118
166
-0.85
Min
-20
-1
-5
±10
-1.2
Typ
Max
Units
V
µA
µA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BV
DSS
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-2A, dI/dt=100A/µs
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using
≤
10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J
=25°C.
D. The R
θJA
is the sum of the thermal impedance from junction to lead R
θJL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 5: Nov 2011
www.aosmd.com
Page 2 of 5
AO3423
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
-10V
20
-8V
-6V
-5V
-4V
-3.5V
15
-I
D
(A)
-3V
10
-2.5V
5
2
-2V
V
GS
=-1.5V
0
1
2
3
4
5
0
0
2
3
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
1
4
125°C
25°C
-I
D
(A)
6
8
10
V
DS
=-5V
4
0
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
180
160
V
GS
=-2.5V
140
R
DS(ON)
(mΩ)
Ω
120
V
GS
=-4.5V
100
80
60
40
0
2
4
6
8
10
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
V
GS
=-10V
Normalized On-Resistance
1.6
I
D
=-2A, V
GS
=-4.5V
1.4
I
D
=-2A, V
GS
=-10V
1.2
I
D
=-1A, V
GS
=-2.5V
1.0
0.8
0
25
50
75
100
125
150
175
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
200
180
160
R
DS(ON)
(mΩ)
Ω
140
120
125°C
100
80
25°C
60
40
0
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
2
-I
S
(A)
I
D
=-2A
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.0
0.2
25°C
Rev 5: Nov 2011
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Page 3 of 5
AO3423
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
V
DS
=-10V
I
D
=-2A
450
Capacitance (pF)
C
iss
300
600
4
-V
GS
(Volts)
3
2
150
1
C
rss
0
C
oss
0
0
2
3
4
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1
5
0
10
15
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
20
100.0
1000
10µs
10.0
T
J(Max)
=150°C
T
A
=25°C
Power (W)
100
-I
D
(Amps)
R
DS(ON)
limited
100µs
1ms
10ms
1.0
0.1
DC
T
J(Max)
=150°C
T
A
=25°C
0.01
100ms
10s
10
0.0
1
100
0.00001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
0.001
1
10
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.1
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=125°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
Single Pulse
T
on
T
100
1000
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 5: Nov 2011
www.aosmd.com
Page 4 of 5
AO3423
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
VDC
VDC
DUT
Vgs
Ig
R esistive Sw itching Test C ircuit & W aveform s
RL
V ds
Vgs
Vgs
Rg
DUT
V DC
V gs
V ds
D iode R e covery Te st C ircuit & W aveform s
V ds +
DUT
V gs
t
rr
Vds -
Isd
V gs
Ig
L
VDC
+
V dd
-
-Vds
Rev 5: Nov 2011
+
Charge
t
o n
t
d(o n)
t
r
t
d(o ff)
t
o ff
t
f
+
-
-
+
-
Vds
Qgs
Qgd
V dd
90%
10%
Q
rr
= -
Idt
-Isd
-I
F
dI/dt
-I
R M
V dd
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Page 5 of 5
