AP4509AGH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Good Thermal Performance
▼
Fast Switching Performance
▼
RoHS Compliant & Halogen-Free
S1
G1
S2
G2
D1/D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BV
DSS
R
DS(ON)
I
D
P-CH BV
DSS
R
DS(ON)
I
D
D1
30V
10mΩ
14A
-30V
23mΩ
-9.5A
D2
Description
TO-252-4L
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
G1
G2
S1
S2
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
3
3
Rating
N-channel
30
+20
14
11
50
3.13
-55 to 150
-55 to 150
P-channel
-30
+20
-9.5
-7.6
-40
Units
V
V
A
A
A
W
℃
℃
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
3
Value
6
40
Unit
℃/W
℃/W
Data and specifications subject to change without notice
1
201501162
AP4509AGH-HF
N-CH Electrical Characteristics@ T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=11A
V
GS
=5V, I
D
=7A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=7A
V
DS
=24V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=7A
V
DS
=24V
V
GS
=4.5V
V
DS
=15V
I
D
=7A
R
G
=3.3
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
Min.
30
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
21
-
-
15
3
10
10
7
25
11
715
220
160
Max. Units
-
10
16
3
-
10
+100
24
-
-
-
-
-
-
1140
-
-
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=2.6A, V
GS
=0V
I
S
=7A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
25
20
Max. Units
1.2
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
2
AP4509AGH-HF
P-CH Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
o
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-8A
V
GS
=-5V, I
D
=-5A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-5A
V
DS
=-24V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=-5A
V
DS
=-24V
V
GS
=-4.5V
V
DS
=-15V
I
D
=-5A
R
G
=3.3
V
GS
=-10V
V
GS
=0V
V
DS
=-25V
f=1.0MHz
Min.
-30
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
15
-
-
17
3
10
11
6
40
26
210
185
Max. Units
-
23
35
-3
-
-10
+100
27.2
-
-
-
-
-
-
-
-
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
1260 2000
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=-2.6A, V
GS
=0V
I
S
=-5A, V
GS
=0V
dI/dt=-100A/µs
Min.
-
-
-
Typ.
-
21
14
Max. Units
-1.2
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test.
3.N-CH , P-CH are same , mounted on 2oz FR4 board t
≦10s.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4509AGH-HF
N-Channel
40
40
T
A
= 25 C
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
30
10V
7.0V
6.0V
5.0V
V
G
= 4.0V
T
A
= 150
o
C
30
10V
7.0V
6.0V
5.0V
V
G
= 4.0V
20
20
10
10
0
0
1
2
3
4
0
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
15
2.4
I
D
=7A
T
A
=25 C
2.0
13
o
I
D
= 11 A
V
G
=10V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
1.6
11
1.2
9
0.8
7
2
3
4
5
6
7
8
9
10
0.4
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
10
8
Normalized V
GS(th)
I
S
(A)
6
T
j
=150
o
C
T
j
=25
o
C
1.2
4
0.8
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.4
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4509AGH-HF
N-Channel
10
1000
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
I
D
=7A
V
DS
=24V
8
800
C
iss
C (pF)
6
600
4
400
2
200
C
oss
C
rss
0
0
10
20
30
40
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (R
thja
)
Operation in this
area limited by
R
DS(ON)
10
100us
1ms
10ms
100ms
1s
0.2
0.1
0.1
0.05
I
D
(A)
1
0.02
0.01
P
DM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
A
Rthja=75℃/W
℃
0.1
T
A
=25
o
C
Single Pulse
0.01
0.01
0.1
1
10
DC
0.001
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
5
