AP6P250N
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Small Package Outline
▼
Surface Mount Device
▼
RoHS Compliant & Halogen-Free
SOT-23S
G
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
S
-60V
250mΩ
-1.6A
D
I
D
Description
AP6P250N series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide range
of power applications.
The SOT-23S package is widely preferred for commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G
S
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
3
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
3
.
Rating
-60
+20
-1.6
-1.3
-10
1.25
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
100
Unit
℃/W
Data and specifications subject to change without notice
1
201602242
AP6P250N
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-1.6A
V
GS
=-4.5V, I
D
=-1A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-1A
V
DS
=-48V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=-1A
V
DS
=-48V
V
GS
=-4.5V
V
DS
=-30V
I
D
=-1A
R
G
=3.3Ω
V
GS
=-10V
V
GS
=0V
V
DS
=-25V
f=1.0MHz
Min.
-60
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
3.8
-
-
5
1.5
1.8
8
5
17
3
450
37
28
Max. Units
-
250
300
-3
-
-25
+100
8
-
-
-
-
-
-
720
-
-
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
.
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=-1A, V
GS
=0V
I
S
=-1A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
17
9
Max. Units
-1.3
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t <10sec ; 300
℃/W
when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6P250N
10
10
T
A
=25 C
8
o
-I
D
, Drain Current (A)
6
-I
D
, Drain Current (A)
-10V
-8.0V
-7.0V
-6.0V
-5.0V
-4.5V
V
G
= -4.0V
T
A
=150
o
C
8
6
-10V
-8.0V
-7.0V
-6.0V
-5.0V
-4.5V
V
G
= -4.0V
4
4
2
2
0
0
1
2
3
4
5
0
0
2
4
6
8
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
200
2.8
I
D
= -1A
190
T
A
=25 C
Normalized R
DS(ON)
o
2.4
I
D
= -1.6 A
V
G
= - 10V
R
DS(ON)
(m
Ω
)
180
2.0
170
.
1.6
160
1.2
150
0.8
140
0.4
2
4
6
8
10
-100
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
10
I
D
= -1mA
8
1.6
-I
S
(A)
6
Normalized V
GS(th)
T
j
=150 C
o
T
j
=25 C
o
1.2
4
0.8
2
0.4
0
0
0.2
0.4
0.0
-V
SD
-
, Source-to-Drain Voltage (V)
0.6
0.8
1
1.2
1.4
1.6
-100
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6P250N
f=1.0MHz
10
800
-V
GS
, Gate to Source Voltage (V)
I
D
= -1 A
V
DS
= -48V
8
600
6
C (pF)
C
iss
400
4
200
2
0
0
2
4
6
8
10
0
C
oss
C
rss
0
20
40
60
80
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
10
Normalized Thermal Response (R
thja
)
0.2
-I
D
(A)
Operation in this
area limited by
R
DS(ON)
1
0.1
0.1
0.05
0.1
100us
1ms
10ms
100ms
.
0.02
0.01
P
DM
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 300℃/W
Single Pulse
0.01
0.01
T
A
=25
o
C
Single Pulse
0.1
1
10
100
1s
DC
0.001
0.001
1000
0.0001
0.001
0.01
0.1
1
10
100
1000
0.01
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
8
2
V
DS
=-5V
1.6
6
-I
D
, Drain Current (A)
-I
D
, Drain Current (A)
T
j
=150 C
o
1.2
4
0.8
2
T
j
=25 C
o
0.4
0
0
1
2
3
4
5
6
0
25
50
75
100
125
150
-V
GS
, Gate-to-Source Voltage (V)
T
A
, Ambient Temperature ( C )
o
Fig 11. Transfer Characteristics
Fig 12. Drain Current v.s. Ambient
Temperature
4
AP6P250N
2
1.6
I
D
= -1mA
1.6
P
D
, Power Dissipation(W)
1.2
Normalized BV
DSS
1.2
0.8
0.8
0.4
0.4
0
-100
-50
0
50
100
150
0
0
50
100
150
T
j
, Junction Temperature ( C)
o
T
A
, Ambient Temperature(
o
C)
Fig 13. Normalized BV
DSS
v.s. Junction
Temperature
1000
Fig 14. Total Power Dissipation
T
j
=25
o
C
800
R
DS(ON)
(m
Ω
)
600
400
.
-4.5V
V
GS
= -10V
200
0
0
3
6
9
12
-I
D
, Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5
