AS2307
P-Channel MOSFET
SOT-23 Plastic-Encapsulate MOSFETS
FEATURE
TrenchFET Power MOSFET
SOT-23
APPLICATIONS
Load Switch for Portable Devices
DC/DC Converter
1. GATE
2. SOURCE
3. DRAIN
MARKING: B 1 1
■
Maximum ratings (T
a
=25℃ unless otherwise noted)
Characteristic
特性參數
Drain-Source V oltage漏極-源極電壓
Gate- Source V oltage栅極-源極電壓
Drain Current (continuous)漏極電流-連續
Drain Current (pulsed)漏極電流-脉冲
TotalDevice Dissipation
½耗散功率
Thermal Resistance Junction-Ambient
熱阻
Junction/Storage Temperature
結溫/儲存溫度
Symbol
符號
BV
DSS
V
GS
I
D
（at
TA = 25°C）
I
DM
P
TOT
(at TA = 25°C
at TA = 70°C)
R
Θ
JA
T
J
,
T
stg
Max
最大值
Unit
單½
-30
+20
-3
-12
1.04
0.67
120
-55~150
V
V
A
A
W
℃/W
℃
http://www.anbonsemi.com
TEL:886-755-23776891
FAX:886-755-81482182
Document ID
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
3
Page 1
AS-3150031
AS2307
■
Maximum ratings (T
a
=25℃ unless otherwise noted)
P-Channel MOSFET
SOT-23 Plastic-Encapsulate MOSFETS
Characteristic
特性參數
Drain-Source Breakdown V oltage
漏極-源極擊穿電壓(I
D
=-250uA,V
GS
=0V)
Gate Threshold V oltage
栅極開启電壓(I
D
=-250uA,V
GS
= V
DS
)
Zero Gate V oltageDrain Current
零栅壓漏極電流(V
GS
=0V, V
DS
= -30V)
Gate Body Leakage
栅極漏電流(V
GS
=+20V, V
DS
=0V)
Static Drain-Source On-State Resistance
静态漏源導通電阻(I
D
=-3.2A,V
GS
=-10V)
(I
D
=-2.5A,V
GS
=-4.5V)
Diode Forward V oltageDrop
内附二極管正向壓降(I
SD
=-1A,V
GS
=0V)
Input Capacitance
輸入電容
(V
GS
=0V, V
DS
=-15V,f=1MHz)
Common Source Output Capacitance
共源輸出電容
(V
GS
=0V, V
DS
=-15V,f=1MHz)
Gate Source Charge
栅源電荷密度
(V
DS
=-15V, I
D
=-1.7A, V
GS
=-4.5V)
Gate Drain Charge
栅漏電荷密度
(V
DS
=-15V, I
D
=-1.7A, V
GS
=-4.5V)
Turn-On Delay Time
開启延迟時間
(V
DS
=-15V, I
D
=-1A, R
GEN
=6
Ω
,V
GS
=-10V)
Turn-On Rise Time
開启上升時間
(V
DS
=-15V, I
D
=-1A, R
GEN
=6
Ω
,V
GS
=-10V)
Turn-Off Delay Time
關断延迟時間
(V
DS
=-15V, I
D
=-1A, R
GEN
=6
Ω
,V
GS
=-10V)
Turn-On Fall Time
開启下降時間
(V
DS
=-15V, I
D
=-1A, R
GEN
=6
Ω
,V
GS
=-10V)
Pulse Width<300μs; Duty Cycle<2.0%
http://www.anbonsemi.com
TEL:886-755-23776891
FAX:886-755-81482182
Symbol
符號
BV
DSS
V
GS
(th)
I
DSS
I
GSS
Min
最小值
-30
-1
—
—
Typ
典型值
—
—
—
—
Max
最大值
—
-3
-1
+100
Unit
單½
V
V
u
A
n
A
R
DS(ON)
—
58
75
—
460
74
2.8
2.3
33
17
39
5
70
95
-1.2
—
—
—
—
—
—
—
—
mΩ
V
SD
C
ISS
C
OSS
Q
gs
Q
gd
—
—
—
—
—
—
—
—
—
V
pF
pF
nC
nC
t
d(on)
t
r
t
d(off)
t
f
ns
ns
ns
ns
Document ID
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
3
Page 2
AS-3150031
AS2307
627 3DFNDJH 2XWOLQH 'LPHQVLRQV
P-Channel MOSFET
SOT-23 Plastic-Encapsulate MOSFETS
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
8°
0°
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
0°
6°
627 6XJJHVWHG 3DG /D\RXW
http://www.anbonsemi.com
TEL:886-755-23776891
FAX:886-755-81482182
Document ID
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
3
Page 3
AS-3150031
电子工程世界
