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AS2341

漏源电压(Vdss):20V 连续漏极电流(Id)(25°C 时):4A 栅源极阈值电压:900mV @ 250uA 漏源导通电阻:55mΩ @ 3.3A,4.5V 最大功率耗散(Ta=25°C):1.2W 类型:P沟道 P沟道,-20V,-4A,55mΩ@-4.5V

器件类别:分立半导体    MOS(场效应管)   

厂商名称:台湾安邦(AnBon)

厂商官网:http://www.formosagr.com/

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器件参数
参数名称
属性值
漏源电压(Vdss)
20V
连续漏极电流(Id)(25°C 时)
4A
栅源极阈值电压
900mV @ 250uA
漏源导通电阻
55mΩ @ 3.3A,4.5V
最大功率耗散(Ta=25°C)
1.2W
类型
P沟道
文档预览
AS2341
P-Channel MOSFET
SOT-23 Plastic-Encapsulate MOSFETS
FEATURE
TrenchFET Power MOSFET
SOT-23
APPLICATIONS
Load Switch for Portable Devices
DC/DC Converter
1. GATE
2. SOURCE
3. DRAIN
MARKING: 41 YW
Maximum ratings (T
a
=25℃ unless otherwise noted)
Characteristic
特性參數
Drain-Source V oltage
漏極-源極電壓
Gate- Source V oltage
栅極-源極電壓
Drain Current (continuous)
漏極電流-連續
Drain Current (pulsed)
漏極電流-脉冲
TotalDevice Dissipation
½耗散功率
T
A
=
25℃環境溫度爲 25℃
Junction
結溫
Storage Temperature
儲存溫度
Symbol
符號
BV
DSS
V
GS
I
D
I
DM
Max
最大值
-20
+10
-4
-12
Unit
單½
V
V
A
A
P
D
1200
mW
T
J
T
stg
150
-55to+150
http://www.anbonsemi.com
TEL:886-755-23776891
FAX:886-755-81482182
Document ID
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
3
Page 1
AS-3150045
AS2341
Maximum ratings (T
a
=25℃ unless otherwise noted)
P-Channel MOSFET
SOT-23 Plastic-Encapsulate MOSFETS
Characteristic
特性參數
Drain-Source Breakdown V oltage
漏極-源極擊穿電壓(I
D
= -250uA,V
GS
=0V)
Gate Threshold V oltage
栅極開启電壓(I
D
= -250uA,V
GS
= V
DS
)
Diode Forward V oltageDrop
内附二極管正向壓降(I
S
= -0.75A,V
GS
=0V)
Zero Gate V oltageDrain Current
零栅壓漏極電流(V
GS
=0V, V
DS
= -16V)
(V
GS
=0V, V
DS
= -16V, T
A
=
55℃)
Gate Body Leakage
栅極漏電流(V
GS
=+8V, V
DS
=0V)
Static Drain-Source On-State Resistance
静态漏源導通電阻(I
D
= -3.3A,V
GS
= -4.5V)
Static Drain-Source On-State Resistance
静态漏源導通電阻(I
D
= -2.8A,V
GS
= -2.5V)
Static Drain-Source On-State Resistance
静态漏源導通電阻(I
D
= -2.3A,V
GS
= -1.8V)
Input Capacitance
輸入電容
(V
GS
=0V, V
DS
= -10V,f=1MHz)
Output Capacitance
輸出電容
(V
GS
=0V, V
DS
= -10V,f=1MHz)
Turn-ON Time
开启時間
(V
DS
= -10V, I
D
= -2.8A, R
GEN
=6
Ω
)
Turn-OFF Time
关断時間
(V
DS
= -10V, I
D
= -2.8A, R
GEN
=6
Ω
)
Pulse Width<300μs; Duty Cycle<2.0%
Symbol
符號
BV
DSS
V
GS(th)
V
SD
Min
最小值
-20
-0.35
Typ
典型值
Max
最大值
-0.9
Unit
單½
V
V
-1.5
V
I
DSS
-1
-10
+100
55
95
110
u
A
I
GSS
R
DS(ON)
R
DS(ON)
R
DS(ON)
C
ISS
C
OSS
t
(on)
t
(off)
50
88
100
600
120
8
60
n
A
pF
pF
ns
ns
http://www.anbonsemi.com
TEL:886-755-23776891
FAX:886-755-81482182
Document ID
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
3
Page 2
AS-3150045
AS2341
627 3DFNDJH 2XWOLQH 'LPHQVLRQV
P-Channel MOSFET
SOT-23 Plastic-Encapsulate MOSFETS
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
627 6XJJHVWHG 3DG /D\RXW
http://www.anbonsemi.com
TEL:886-755-23776891
FAX:886-755-81482182
Document ID
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
3
Page 3
AS-3150045
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