AS3019E
N-Channel SMD MOSFET ESD Protection
Product Summary
V
(BR)DSS
30V
13Ω@2.5V
R
DS(on)MAX
8Ω@4V
0.1A
I
D
Feature
Low on-resistance
Fast switching speed
Low voltage drive makes this device ideal for
Portable equipment
Easily designed drive circuits
Application
Interfacing
Switching
Package
Circuit diagram
D
G
S
SOT-523
Marking
KN
Page 1
Document ID
AS-3150167
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
4
AS3019E
N-Channel SMD MOSFET ESD Protection
Absolute maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
P
D
R
θJA
T
J
T
STG
Value
30
±20
0.1
0.15
833
150
-55 ~ +150
Unit
V
V
A
W
/W
Electrical characteristics (T
A
=25
o
C, unless otherwise noted)
Parameter
Static Characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
Drain-source on-resistance
1)
Symbol
Test Condition
Min.
Typ.
Max.
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
V
GS
= 0V, I
D
=10µA
V
DS
=30V,V
GS
= 0V
V
GS
=±20V, V
DS
= 0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=4V, I
D
=10mA
V
GS
=2.5V, I
D
=1mA
V
DS
=3V, I
D
=10mA
30
1
±2
0.8
1.5
8
13
20
Forward Trans conductance
Dynamic characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Source-Drain Diode characteristics
Diode Forward voltage
Notes:
1)
2)
Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%.
Guaranteed by design, not subject to production testing.
2)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=5V,V
GS
=5V, I
D
=10mA
R
L
=500Ω,R
GEN
=10Ω
V
DS
=5V,V
GS
=0V,f =1MHz
13
9
4
15
35
80
80
nS
pF
V
DS
V
GS
=0V, I
S
=0.1A
1.2
Page 2
Document ID
AS-3150167
Issued Date
2003/03/08
Revised Date
2012/05/16
℃
℃
℃
Unit
V
µA
µA
V
Ω
mS
V
Revision
D
Page.
4
AS3019E
N-Channel SMD MOSFET ESD Protection
Typical Characteristics
Page 3
Document ID
AS-3150167
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
4
AS3019E
N-Channel SMD MOSFET ESD Protection
SOT-523 Package Information
Symbol
A
A1
A2
b1
B2
c
D
E
E1
e
e1
L
L1
Dimensions In Millimeters
Min.
0.700
0.000
0.700
0.150
0.250
0.100
1.500
0.700
1.450
0.500 TYP.
0.900
0.400 REF.
0.260
°
Dimensions In Inches
Min.
0.028
0.000
0.028
0.006
0.010
0.004
0.059
0.028
0.057
0.020 TYP.
0.035
0.016 REF.
0.010
°
Max.
0.900
0.100
0.800
0.250
0.350
0.200
1.700
0.900
1.750
1.100
0.460
°
Max.
0.035
0.004
0.031
0.010
0.014
0.008
0.067
0.035
0.069
0.043
0.018
°
Revision
D
Page.
4
0
8
0
8
θ
Page 4
Document ID
AS-3150167
Issued Date
2003/03/08
Revised Date
2012/05/16
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