AS60N20S
N-Channel Enhancement Mode MOSFET
Product Summary
V
(BR)DSS
60V
5.4mΩ@4.5V
R
DS(on)MAX
4.5mΩ@10V
20A
I
D
Feature
Advanced trench process technology
High Density Cell Design For Ultra Low
On-Resistance
Application
DC/DC Converter
Ideal for high-frequency switching and
synchronous rectification
Package
Circuit diagram
SOP-8
Marking
D
D
D
D
6020AS
S
S
S
G
Page 1
Document ID
AS-3150169
Issued Date
2013/03/08
Revised Date
2015/05/16
Revision
D
Page.
5
AS60N20S
N-Channel Enhancement Mode MOSFET
Absolute maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
θJA
T
J
T
STG
Value
60
±20
20
130
3.5
36
150
-55 ~ +150
Unit
V
V
A
A
W
/W
Electrical characteristics (T
A
=25
o
C, unless otherwise noted)
Parameter
Static Characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
Drain-source on-resistance
Forward transconductance
Dynamic characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Source-Drain Diode characteristics
Diode Forward Current
Diode Forward voltage
Notes:
1)
2)
Pulse Test: Pulse Width < 300µs, Duty Cycle ≤2%.
Guaranteed by design, not subject to production testing.
Symbol
Test Condition
Min.
Typ.
Max.
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
V
GS
= 0V, I
D
=250µA
V
DS
=60V,V
GS
= 0V
V
GS
=±20V, V
DS
= 0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=18A
V
DS
=5V, I
D
=20A
60
1
±100
1.0
4.0
4.6
35
2.4
4.5
5.4
1)
R
DS(on)
g
FS
1)
2)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
1)
4000
V
DS
=30V,V
GS
=0V,f =1MHz
680
23
67
V
DS
=30V,V
GS
=10V,I
D
=20A
12
8.5
11
V
DD
=30V,V
GS
=10V,
R
L
=1.7Ω,R
GEN
=3Ω
5
56
12
nS
nC
pF
I
S
V
DS
V
GS
=0V, I
S
=20A
20
1.2
Page 2
Document ID
AS-3150169
Issued Date
2013/03/08
Revised Date
2015/05/16
℃
℃
℃
Unit
V
µA
nA
V
mΩ
S
A
V
Revision
D
Page.
5
AS60N20S
N-Channel Enhancement Mode MOSFET
Typical Characteristics
Page 3
Document ID
AS-3150169
Issued Date
2013/03/08
Revised Date
2015/05/16
Revision
D
Page.
5
AS60N20S
N-Channel Enhancement Mode MOSFET
Typical Characteristics
Page 4
Document ID
AS-3150169
Issued Date
2013/03/08
Revised Date
2015/05/16
Revision
D
Page.
5
AS60N20S
N-Channel Enhancement Mode MOSFET
SOP-8 Package Information
Symbol
A
A1
A2
b
c
D
E
E1
e
L
Dimensions In Millimeters
Min.
1.350
0.100
1.350
0.330
0.170
4.700
3.800
5.800
1.270(BSC)
0.400
1.270
Max.
1.750
0.250
1.550
0.510
0.250
5.100
4.000
6.200
Dimensions In Inches
Min.
0.053
0.004
0.053
0.013
0.006
0.185
0.150
0.228
0.050(BSC)
0.016
0.050
Max.
0.069
0.010
0.061
0.020
0.010
0.200
0.157
0.244
Page 5
Document ID
AS-3150169
Issued Date
2013/03/08
Revised Date
2015/05/16
°
Revision
D
Page.
5
°
°
°
0
8
0
8
θ
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