Plastic-Encapsulate Diodes
SCHOTTKY BARRIER DIODE
B0520W/B0530W/B0540W
FEATURES
Low Forward Voltage Drop
Guard Ring Construction for Transient Protection
High Conductance
Also Available in Lead Free Version
-
SOD-123
+
Maximum Ratings @Ta=25℃
Parameter
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking V oltage
RMS Reverse Voltage Reverse Voltage (DC)
Average Rectified Output Current
Forward Current Surge Peak
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature
Voltage Rate of Change
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
o
I
FSM
P
D
R
θJA
T
j
T
STG
dv/dt
14
21
0.5
5.5
500
250
125
-55~+150
1000
28
V
A
A
mW
℃/W
℃
℃
V/μs
20
30
40
V
B0520W
B0530W
B0540W
Unit
Electrical Characteristics @Ta=25℃
Parameter
Minimum reverse b
reakdown voltage
Symbol
B0520W
20
V
(BR)
--
--
V
F1
Forward voltage
V
F2
V
F3
Reverse current
I
R1
I
R2
I
R3
Reverse current
I
R4
I
R5
Capacitance between terminals
C
T
0.32
0.385
--
75
--
250
--
--
--
B0530W
--
30
--
0.375
0.430
--
--
20
--
130
--
--
B0540W
--
--
40
--
0.510
0.62
--
--
10
--
20
170
pF
μA
μA
V
V
Unit
Test
Conditions
I
R
=250μA
I
R
=200μA
I
R
=20μA
I
F
=0.1A
I
F
=0.5A
I
F
=1A
V
R
=10V
V
R
=15V
V
R
=20V
V
R
=30V
V
R
=40V
V
R
=0,f=1MHz
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P1
Plastic-Encapsulate Diodes
B0520W/B0530W/B0540W
Typical Characteristics
1
Forward
Characteristics
1000
Reverse
Characteristics
o
T
a
=100 C
(A)
(uA)
REVERSE CURRENT I
R
C
o
C
100
FORWARD CURRENT
T=
a
2
5
0.1
T=
a
1
00
I
F
o
10
T
a
=25 C
o
1
0.01
0.0
0.2
0.4
0.6
0.8
1.0
0.1
0
5
10
15
20
25
30
FORWARD VOLTAGE
V
F
(V)
REVERSE VOLTAGE
V
R
(V)
1000
Capacitance Characteristics
T
a
=25
℃
600
Power Derating Curve
(mW)
P
D
POWER DISSIPATION
100
f=1MHz
500
CAPACITANCE BETWEEN TERMINALS
C
T
(pF)
400
100
300
200
100
10
0.1
1
10
0
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P2
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