JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
B0520WS/B0530WS/B0540WS
SCHOTTKY BARRIER DIODE
FEATURES
Low Forward Voltage Drop
Guard Ring Construction for Transient Protection
High Conductance
Also Available in Lead Free Version
MARKING: B0520WS: SD
B0530WS: SE
B0540WS: SF
Maximum Ratings @Ta=25℃
Parameter
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage reverse voltage (DC)
Average rectified output current
Forward current surge peak
Power dissipation
Thermal resistance junction to ambient
Junction temperature
Storage temperature
Voltage rate of change
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
o
I
FSM
P
D
R
θJA
T
j
T
STG
dv/dt
14
21
0.5
5.5
200
500
125
-55~+150
1000
28
V
A
A
mW
℃/W
℃
℃
V/μs
20
30
40
V
SOD-323
B0520WS
B0530WS
B0540WS
Unit
Electrical Characteristics @Ta=25℃
Parameter
Minimum reverse b-
reakdown voltage
Symbol
B0520WS
20
V
(BR)
--
--
V
F1
Forward voltage
V
F2
V
F3
Reverse current
I
R1
I
R2
I
R3
Reverse current
I
R4
I
R5
Capacitance between terminals
C
T
0.33
0.39
--
75
--
250
--
--
170
B0530WS
--
30
--
0.36
0.45
--
--
80
100
500
--
170
B0540WS
--
--
40
--
0.510
0.62
--
--
10
--
20
170
pF
μA
μA
V
V
Unit
Conditions
I
R
=250μA
I
R
=500μA
I
R
=20μA
I
F
=0.1A
I
F
=0.5A
I
F
=1A
V
R
=10V
V
R
=15V
V
R
=20V
V
R
=30V
V
R
=40V
V
R
=0,f=1MHz
C,Apr,2013
Typical Characteristics
Forward
1000
B0540WS
Reverse
Characteristics
Characteristics
3000
1000
(mA)
T
a
=100
℃
100
T
a
10
REVERSE CURRENT I
R
FORWARD CURRENT
T
a
00
=1
I
F
(uA)
5
℃
=2
100
10
℃
T
a
=25
℃
1
1
0.1
0
200
400
600
800
0.1
0
10
20
30
40
FORWARD VOLTAGE
V
F
(mV)
REVERSE VOLTAGE
V
R
(V)
Capacitance Characteristics
120
300
Power Derating Curve
T
a
=25
℃
CAPACITANCE BETWEEN TERMINALS
C
T
(pF)
f=1MHz
100
80
P
D
POWER DISSIPATION
0
5
10
15
20
25
30
(mW)
200
60
40
100
20
0
0
0
25
50
75
100
125
REVERSE VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
C,Apr,2013
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