Plastic-Encapsulate Diodes
SCHOTTKY BARRIER DIODE
B5817W
FEATURES
For use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications.
SOD-123
MARKING:
SJ
-
+
MAXIMUM RATINGS (TA=25
Parameter
Non-Repetitive Peak reverse voltage
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking
RMS Reverse Voltage
Average Rectified Output Current
Power Dissipation
unless otherwise noted)
Symbol
Value
20
20
20
20
14
0.3
500
250
-65~+150
Units
V
V
V
V
V
A
mW
/W
V
RM
V
RRM
V
RWM
V
R
R(RMS)
I
O
Pd
R
θJA
T
STG
Thermal Resistance Junction to Ambient
Storage temperature
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
unless otherwise specified)
Test conditions
I
R
= 1mA
V
R
= 20V
I
F
=1A
I
F
=3A
Symbol
V
(BR)
I
R
V
F
MIN
20
MAX
UNIT
V
1
0.45
0.75
120
mA
V
V
Diode capacitance
C
D
V
R
=4V, f=1MHz
pF
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P1
Plastic-Encapsulate Diodes
B5817W
Typical
Characteristics
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P2
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