JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
B772
FEATURE
Low speed switching
1.
BASE
TRANSISTOR（PNP）
SOT-89-3L
1 2 3
MARKING:B772
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ӨJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance,
Junction
to Ambient
2
.
COLLETOR
3
.
EMITTER
Value
-40
-30
-6
-3
0.5
250
150
-55~150
Unit
V
V
V
A
W
℃
/W
Junction Temperature
Storage Temperature
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Test conditions
I
C
=-100μA ,I
E
=0
I
C
= -10mA , I
B
=0
I
E
= -100μA,I
C
=0
V
CB
= -40V, I
E
=0
V
CE
=-30V, I
B
=0
V
EB
=-6V, I
C
=0
V
CE
= -2V, I
C
= -1A
I
C
=-2A, I
B
= -0.2A
I
C
=-2A, I
B
= -0.2A
V
CE
= -5V, I
C
=-0.1A
f =10MHz
50
60
Min
-40
-30
-6
-1
-10
-1
400
-0.5
-1.5
V
V
MHz
Typ
Max
Unit
V
V
V
μA
μA
μA
CLASSIFICATION OF h
FE
Rank
Range
R
60-120
O
100-200
Y
160-320
GR
200-400
C,Dec,2013
Typical Characteristics
Static Characteristic
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
-0.0
-0.0
10000
B772
h
FE
COMMON EMITTER
V
CE
= -2V
——
I
C
COMMON EMITTER
T
a
=25
℃
-7.5mA
-6.75mA
-6.0mA
h
FE
1000
(A)
-5.25mA
-4.5mA
-3.75mA
I
C
COLLECTOR CURRENT
DC CURRENT GAIN
T
a
=100
℃
T
a
=25
℃
-3.0mA
-2.25mA
-1.5mA
100
I
B
=-0.75mA
10
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-1
-10
-100
-1000
-3000
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
-1000
V
CEsat
——
β=10
I
C
V
BEsat
——
-1500
I
C
β=10
-1200
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
-100
-900
T
a
=100
℃
T
a
=25
℃
-10
-600
T
a
=25
℃
T
a
=100
℃
-1
-1
-10
-100
-1000
-3000
-300
-1
-10
-100
-1000
-3000
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
-3000
I
C
COMMON EMITTER
V
CE
= -2V
——
V
BE
200
f
T
——
I
C
-1000
(mA)
(MHz)
=1
00
℃
-100
-10
-1
100
I
C
TRANSITION FREQUENCY
COLLECTOR CURRENT
T=
a
25
℃
T
a
f
T
COMMON EMITTER
V
CE
=-5V
T
a
=25
℃
10
-4.23
-0.1
-300
-400
-500
-600
-700
-800
-900 -1000 -1100-1200
-10
-100
BASE-EMMITER VOLTAGE V
BE
(mV)
COLLECTOR CURRENT
I
C
(mA)
0.6
P
C
——
T
a
COLLECTOR POWER DISSIPATION
P
C
(W)
0.5
0.4
0.3
0.2
0.1
0.0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
C,Dec,2013
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