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BAS116

Rectifier Diode, 1 Element, 0.2A, 85V V(RRM), Silicon,

器件类别:分立半导体    二极管   

厂商名称:扬杰科技(YANGJIE)

厂商官网:http://www.21yangjie.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
扬杰科技(YANGJIE)
Reach Compliance Code
unknown
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
R-PDSO-G3
JESD-609代码
e3
元件数量
1
端子数量
3
最高工作温度
150 °C
最大输出电流
0.2 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
最大功率耗散
0.225 W
最大重复峰值反向电压
85 V
最大反向恢复时间
3 µs
表面贴装
YES
端子面层
Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
BAS116
 
 
RoHS
COMPLIANT
Small-Signal Fast Switching Diodes
Features
● VR 100V
I
F
AV
200mA
Typical Applications
●Low-Leakage
Mechanical Data
Package:
SOT23
Terminals:
Tin plated leads, solderable per
J-STD-002 and JESD22-B102
Marking:
JV
Maximum Ratings
(Ta=25℃ Unless otherwise specified
PARAMETER
SYMBOL
UNIT
Conditions
VALUE
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Average forward current
Power dissipation
Maximum junction temperature
Storage temperature range
V
RRM
V
R
IFSM
I
FAV
P
tot
T
j
T
stg
V
V
A
mA
mW
IR=100uA
Non-Repetitive t = 1 μs
85
100
4
200
225
150
-55 to +150
Electrical Characteristics(Ta=25℃ Unless otherwise specified)
PARAMETER
Symbol
UNIT
Conditions
Min
Max
Breakdown Voltage
V
R
V
IR=100uA
IF=1mA
IF=10mA
100
0.9
1.0
1.1
1.25
5
4
3
Forward Voltage
V
F
V
IF=50mA
IF=150mA
Reverse Leakage Current
Capacitance
Reverse Recovery Time
I
R
C
Trr
nA
pF
us
VR=75V
VR=0V,f=1MHz
IF=IR=10mA,Irr=0.1*IR,
RL=100Ω
1/4
S-S2016
Rev.1.1,24-Jan-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
BAS116
 
Ordering Information (Example)
PREFERED P/N
BAS116
PACKING
CODE
F2
UNIT WEIGHT(g)
Approximate 0.008
MINIMUM
PACKAGE(pcs)
3000
 
INNER BOX
QUANTITY(pcs)
30000
OUTER CARTON
QUANTITY(pcs)
120000
DELIVERY
MODE
7” reel
Characteristics (Typical)
Typical Instantaneous Forward Characterics
1100
T
j
=25
Typical Reverse Characteristics
100
T
j
=125
T
j
=75
T
j
=125
900
800
Instantaneous Reverse Current (nA)
Instantaneous Forward Voltage(mV)
1000
T
j
=75
10
700
T
j
=25
600
50
100
150
200
1
0
10
20
30
40
50
60
70
80
Instantaneous Forward Current(mA)
Reverse Voltage(V)
2.8
Typical Junction Capacitance
f=1MHz
Tj=25
Junction Capacitance Cj (pF)
2.4
2.0
1.6
1.2
0
5
10
15
20
Reverse Voltage VR(V)
2/4
S-S2016
Rev.1.1,24-Jan-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
BAS116
 
 
■SOT-23
Package Outline Dimensions
■SOT-23Suggested Pad Layout
3/4
S-S2016
Rev.1.1,24-Jan-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
BAS116
 
 
Disclaimer
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the
right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design
or otherwise.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with
equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use
of sale.
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website
http://
www.21yangjie.com
, or consult your nearest Yangjie’s sales office for further assistance.
4/4
S-S2016
Rev.1.1,24-Jan-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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