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BAS116TWT/R13

Rectifier Diode, 3 Element, 0.2A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-6

器件类别:分立半导体    二极管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
包装说明
R-PDSO-G6
针数
6
Reach Compliance Code
compliant
配置
SEPARATE, 3 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
R-PDSO-G6
元件数量
3
端子数量
6
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
0.2 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
最大功率耗散
0.2 W
认证状态
Not Qualified
最大重复峰值反向电压
100 V
最大反向恢复时间
3 µs
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
BAS116TW/BAW156DW/BAV170DW/BAV199S
SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES
VOLTAGE
FEATURES
Suface mount package ideally suited for automatic insertion.
Very low leakage current. 2nA typical at VR=75V.
Low capacitance. 2pF max at VR=0V, f=1MHz
In compliance with EU RoHS 2002/95/EC directives
100 Volts
POWER
200mWatts
MECHANICAL DATA
• Case: SOT-363 plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx weight: 0.008 gram
• Marking: BAS116TW :PA,BAW156DW :P4,BAV170DW :P3,BAV199S :PB
ABSOLUTE RATINGS (each diode)
PA RA ME TE R
R e ve r s e Vo l t a g e
P e a k R e ve r s e Vo l t a g e
C o nti nuo us F o r wa r d C ur r e nt
N o n- r e p e t i t i ve P e a k F o r w a r d S ur g e C ur r e nt a t t = 1 . 0 us
I
S ym b o l
V
R
V
RM
I
Va lue
75
100
0.2
4
.0
Uni ts
V
V
A
A
F
FSM
THERMAL CHARACTERISTICS
PA RA ME TE R
P o we r D i s s i p a ti o n (No te 1 )
The r m a l Re s i s ta nc e , J unc ti o n to A m b i e nt ( No te 1 )
J u n c t i o n Te m p e r a t u r e
S t o r a g e Te m p e r a t u r e
S ym b o l
P
TOT
R
θ
J A
T
J
T
S TG
Va lue
200
625
-55 to 150
-55 to 150
O
Uni ts
mW
C /W
O
C
C
O
6
5
4
6
5
4
6
5
4
6
5
4
NOTE:
1. FR-4 Board = 70 x 60 x 1mm.
1
2
3
1
2
3
1
2
3
1
2
3
Fig.48
Fig.51
Fig.52
Fig.32
BAS116TW
REV.0.1-FEB.11.2009
BAW156DW
BAV170DW
BAV199S
PAGE . 1
BAS116TW/BAW156DW/BAV170DW/BAV199S
ELECTRICAL CHARACTERISTICS (each diode) (T
A
=25
O
C, unless otherwise noted)
PA RA ME TE R
R e ve r s e B r e a k d o w n Vo l t a g e
R e ve r s e C ur r e nt
S ym b o l
V
(B R)
I
Te s t C o n d i t i o n
I
R
= 1 0 0 uA
V
R
= 7 5 V
V
R
= 7 5 V , T
J
= 1 5 0
I
F
= 1 m A
I
F
= 1 0 m A
I
F
= 5 0 m A
I
F
= 1 5 0 m A
V
R
= 0 V , f = 1 M H
Z
I
F
= I
R
= 1 0 m A , R
L
= 1 0 0
M IN .
75
T YP.
MA X .
Uni ts
V
R
O
C
0.002
8.0
5
80
0.9
1.0
1.1
1.25
2.0
3.0
nA
F o rwa rd Vo lta g e
V
F
V
To t a l C a p a c i t a n c e
R e v e r s e R e c o v e r y Ti m e
C
T
t
rr
pF
us
CHARACTERISTIC CURVES (each diode)
10
1000
I
R
, Reverse Leakage(nA)
1.0
I
F
, Forward current (mA)
100
T
A
=-25 C
O
0.1
V
R
=75V
10
0.01
1.0
T
A
=75 C
O
T
A
=125 C
O
T
A
=25 C
O
0.001
0
50
100
150
200
0.1
0.2
0.4
0.6
0.8
1.0
1.2
Tj, Junction Temperature (Deg C)
V
F
, Forward Voltage (V)
Fig. 1-Reverse Leakage vs. Junction Temperature
Fig. 2-Forward Current vs. Forward Voltage
1.4
C
T
, Total Capacitance (pF)
1.2
1
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
V
R
, Reverse Voltage ( V)
Fig. 3- Total capacitance vs. Reverse Voltage
REV.0.1-FEB.11.2009
PAGE . 2
BAS116TW/BAW156DW/BAV170DW/BAV199S
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 10K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
REV.0.1-FEB.11.2009
PAGE . 4
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